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Mari, Fujita, Hideo, Nagayoshi, Akio, Yoshimori (1991) Theoretical study of the electronic structure of the dimer—adatom-stacking-fault model for the Si(111) surface. Surface Science, 259 (3). 351-358 doi:10.1016/0039-6028(91)90564-9

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Reference TypeJournal (article/letter/editorial)
TitleTheoretical study of the electronic structure of the dimer—adatom-stacking-fault model for the Si(111) surface
JournalSurface Science
AuthorsMari, FujitaAuthor
Hideo, NagayoshiAuthor
Akio, YoshimoriAuthor
Year1991 (December)Volume259
Issue3
PublisherElsevier BV
DOIdoi:10.1016/0039-6028(91)90564-9Search in ResearchGate
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Mindat Ref. ID6463183Long-form Identifiermindat:1:5:6463183:3
GUID0
Full ReferenceMari, Fujita, Hideo, Nagayoshi, Akio, Yoshimori (1991) Theoretical study of the electronic structure of the dimer—adatom-stacking-fault model for the Si(111) surface. Surface Science, 259 (3). 351-358 doi:10.1016/0039-6028(91)90564-9
Plain TextMari, Fujita, Hideo, Nagayoshi, Akio, Yoshimori (1991) Theoretical study of the electronic structure of the dimer—adatom-stacking-fault model for the Si(111) surface. Surface Science, 259 (3). 351-358 doi:10.1016/0039-6028(91)90564-9
In(1991, December) Surface Science Vol. 259 (3) Elsevier BV

See Also

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Fujita, Mari, Nagayoshi, Hideo, Yoshimori, Akio (1991) Theoretical study of the electronic structure of the dimer-adatom-stacking-fault model for the Si(111) surface. Surface Science Letters, 259 (1). doi:10.1016/0167-2584(91)90296-4
Mari Fujita, , Hideo Nagayoshi, , Akio Yoshimori, (1991) Electronic structure of the DAS model for the Si(111)7 × 7 reconstructed surface by energy band calculations. Surface Science, 242 (1). 229-232 doi:10.1016/0039-6028(91)90271-s
Fujita, Mari, Nagayoshi, Hideo, Yoshimori, Akio (1991) Electronic structure of the DAS model for the Si(111)7×7 reconstructed surface by energy band calculations. Surface Science Letters, 242 (1). doi:10.1016/0167-2584(91)90452-w
Fujita, Mari, Nagayoshi, Hideo, Yoshimori, Akio (1989) Electronic structure of the DAS model for Si(111)7 × 7 by energy band calculations — simplified models. Surface Science, 208 (1). 155-163 doi:10.1016/0039-6028(89)90041-1
Fujita, Mari, Nagayoshi, Hideo, Yoshimori, Akio (1989) Electronic structure of the das model for Si(111) 7x7 by energy band calculations-simplified models. Surface Science Letters, 208 (1). doi:10.1016/0167-2584(89)91039-6
Hideo Nagayoshi, (1991) Electronic structure of the Si(111) surface with column V adatoms. Surface Science, 242 (1). 239-243 doi:10.1016/0039-6028(91)90273-u
Nagayoshi, Hideo (1990) Electronic structure of the Si(111)√3 × √3 surface with column V adatoms. Surface Science, 234 (3). 371-376 doi:10.1016/0039-6028(90)90569-t
Nagayoshi, H. (1983) Electronic structure of the Si(111) reconstructed surface in the vacancy model. II. Surface Science, 127 (1). 1-9 doi:10.1016/0039-6028(83)90395-3
Nagayoshi, Hideo (1993) Theoretical study of the electronic structure of the surface. Surface Science, 282 (1). 163-172 doi:10.1016/0039-6028(93)90619-u
Nagayoshi, Hideo (1991) Electronic structure of the Si(111)√3×√3 surface with column V adatoms. Surface Science Letters, 242 (1). doi:10.1016/0167-2584(91)90454-y
Ihara, Sigeo, Uda, Tsuyoshi, Hirao, Masahiko (1992) Electronic structure of a dimer-adatom-stacking-fault model for the Si(111) 7 × 7 reconstructed surface. Applied Surface Science, 60. 22-28 doi:10.1016/0169-4332(92)90391-a
 
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