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Ram, Sanjay K., Kumar, Satyendra, Roca i Cabarrocas, P. (2008) Normal and anti Meyer–Neldel rule in conductivity of highly crystallized undoped microcrystalline silicon films. Journal of Non-Crystalline Solids, 354 (19) 2263-2267 doi:10.1016/j.jnoncrysol.2007.10.051

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Reference TypeJournal (article/letter/editorial)
TitleNormal and anti Meyer–Neldel rule in conductivity of highly crystallized undoped microcrystalline silicon films
JournalJournal of Non-Crystalline Solids
AuthorsRam, Sanjay K.Author
Kumar, SatyendraAuthor
Roca i Cabarrocas, P.Author
Year2008 (May)Volume354
Issue19
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2007.10.051Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID645850Long-form Identifiermindat:1:5:645850:2
GUID0
Full ReferenceRam, Sanjay K., Kumar, Satyendra, Roca i Cabarrocas, P. (2008) Normal and anti Meyer–Neldel rule in conductivity of highly crystallized undoped microcrystalline silicon films. Journal of Non-Crystalline Solids, 354 (19) 2263-2267 doi:10.1016/j.jnoncrysol.2007.10.051
Plain TextRam, Sanjay K., Kumar, Satyendra, Roca i Cabarrocas, P. (2008) Normal and anti Meyer–Neldel rule in conductivity of highly crystallized undoped microcrystalline silicon films. Journal of Non-Crystalline Solids, 354 (19) 2263-2267 doi:10.1016/j.jnoncrysol.2007.10.051
In(2008, May) Journal of Non-Crystalline Solids Vol. 354 (19) Elsevier BV

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Ram, Sanjay K., Kumar, Satyendra, Roca i Cabarrocas, P. (2006) Study of anomalous behavior of steady state photoconductivity in highly crystallized undoped microcrystalline Si films. Journal of Non-Crystalline Solids, 352 (9) 1172-1175 doi:10.1016/j.jnoncrysol.2005.12.018
Ram, Sanjay K., Kumar, Satyendra, Cabarrocas, P. Roca i (2008) Fractional composition of large crystallite grains: A unique microstructural parameter to explain conduction behavior in single phase undoped microcrystalline silicon. Journal of Non-Crystalline Solids, 354 (19) 2242-2247 doi:10.1016/j.jnoncrysol.2007.10.049
Ram, Sanjay K., Kumar, Satyendra, Vanderhaghen, Régis, Roca i Cabarrocas, P. (2002) Investigations of the electron transport behavior in microcrystalline Si films. Journal of Non-Crystalline Solids, 299. 411-415 doi:10.1016/s0022-3093(01)00955-3
Ram, Sanjay K., Kumar, Satyendra, Roca i Cabarrocas, P. (2008) Influence of the statistical shift of Fermi level on the conductivity behavior in microcrystalline silicon. Physical Review B, 77 (4) doi:10.1103/physrevb.77.045212
Abtew, T.A., Zhang, MingLiang, Pan, Yue, Drabold, D.A. (2008) Electrical conductivity and Meyer–Neldel rule: The role of localized states in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 354 (19) 2909-2913 doi:10.1016/j.jnoncrysol.2007.09.103
Kleider, J.P., Soro, Y.M., Chouffot, R., Gudovskikh, A.S., Roca i Cabarrocas, P., Damon-Lacoste, J., Eon, D., Ribeyron, P.-J. (2008) High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions. Journal of Non-Crystalline Solids, 354 (19) 2641-2645 doi:10.1016/j.jnoncrysol.2007.09.087
Mehta, N., Kumar, A. (2008) Further Meyer–Neldel rule in thermally activated crystallization of chalcogenide glasses. Journal of Non-Crystalline Solids, 354 (52) 5347-5352 doi:10.1016/j.jnoncrysol.2008.09.023
Morigaki, K., Takeda, K., Hikita, H., Ogihara, C., Roca i Cabarrocas, P. (2008) The kinetics of the light-induced defect creation in hydrogenated amorphous silicon – Stretched exponential relaxation. Journal of Non-Crystalline Solids, 354 (19) 2131-2134 doi:10.1016/j.jnoncrysol.2007.09.060
Abramov, A., Daineka, D., Djeridane, Y., Roca i Cabarrocas, P. (2008) Detailed study of surface and interface properties of μc-Si films. Journal of Non-Crystalline Solids, 354 (19) 2218-2222 doi:10.1016/j.jnoncrysol.2007.10.099
Kasouit, S., Damon-Lacoste, J., Vanderhaghen, R., Roca i Cabarrocas, P. (2004) Contribution of plasma generated nanocrystals to the growth of microcrystalline silicon thin films. Journal of Non-Crystalline Solids, 338. 86-90 doi:10.1016/j.jnoncrysol.2004.02.027
Hamma, S, Roca i Cabarrocas, P (1998) Low temperature growth of highly crystallized silicon thin films using hydrogen and argon dilution. Journal of Non-Crystalline Solids, 227. 852-856 doi:10.1016/s0022-3093(98)00342-1
 
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