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Damon-Lacoste, J., Roca i Cabarrocas, P., Chatterjee, P., Veschetti, Y., Gudovskikh, A.S., Kleider, J.P., Ribeyron, P.J. (2006) About the efficiency limits of heterojunction solar cells. Journal of Non-Crystalline Solids, 352 (9) 1928-1932 doi:10.1016/j.jnoncrysol.2005.10.061

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Reference TypeJournal (article/letter/editorial)
TitleAbout the efficiency limits of heterojunction solar cells
JournalJournal of Non-Crystalline Solids
AuthorsDamon-Lacoste, J.Author
Roca i Cabarrocas, P.Author
Chatterjee, P.Author
Veschetti, Y.Author
Gudovskikh, A.S.Author
Kleider, J.P.Author
Ribeyron, P.J.Author
Year2006 (June)Volume352
Issue9
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2005.10.061Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID644302Long-form Identifiermindat:1:5:644302:7
GUID0
Full ReferenceDamon-Lacoste, J., Roca i Cabarrocas, P., Chatterjee, P., Veschetti, Y., Gudovskikh, A.S., Kleider, J.P., Ribeyron, P.J. (2006) About the efficiency limits of heterojunction solar cells. Journal of Non-Crystalline Solids, 352 (9) 1928-1932 doi:10.1016/j.jnoncrysol.2005.10.061
Plain TextDamon-Lacoste, J., Roca i Cabarrocas, P., Chatterjee, P., Veschetti, Y., Gudovskikh, A.S., Kleider, J.P., Ribeyron, P.J. (2006) About the efficiency limits of heterojunction solar cells. Journal of Non-Crystalline Solids, 352 (9) 1928-1932 doi:10.1016/j.jnoncrysol.2005.10.061
In(2006, June) Journal of Non-Crystalline Solids Vol. 352 (9) Elsevier BV

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Kleider, J.P., Soro, Y.M., Chouffot, R., Gudovskikh, A.S., Roca i Cabarrocas, P., Damon-Lacoste, J., Eon, D., Ribeyron, P.-J. (2008) High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions. Journal of Non-Crystalline Solids, 354 (19) 2641-2645 doi:10.1016/j.jnoncrysol.2007.09.087
Chouffot, R., Ibrahim, S., Brüggemann, R., Gudovskikh, A.S., Kleider, J.P., Scherff, M., Fahrner, W.R., Cabarrocas, P. Roca i, Eon, D., Ribeyron, P.-J. (2008) Comparison of photoluminescence and capacitance spectroscopies as efficient tools for interface characterisation of heterojunction solar cells. Journal of Non-Crystalline Solids, 354 (19) 2416-2420 doi:10.1016/j.jnoncrysol.2007.09.032
Kleider, J.P., Gudovskikh, A.S., Godet, C. (2006) DC and AC Hopping transport in metal/amorphous carbon nitride/metal devices. Journal of Non-Crystalline Solids, 352 (9) 1323-1326 doi:10.1016/j.jnoncrysol.2005.12.019
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Kasouit, S., Damon-Lacoste, J., Vanderhaghen, R., Roca i Cabarrocas, P. (2004) Contribution of plasma generated nanocrystals to the growth of microcrystalline silicon thin films. Journal of Non-Crystalline Solids, 338. 86-90 doi:10.1016/j.jnoncrysol.2004.02.027
Dutta, U., Chatterjee, P., Roca i Cabarrocas, P., Chaudhuri, P., Vanderhaghen, R. (2004) Calculation of the position-dependent inner collection efficiency in PIN solar cells using an electrical–optical model. Journal of Non-Crystalline Solids, 338. 677-681 doi:10.1016/j.jnoncrysol.2004.03.066
Guedj, C., Moussy, N., Rabaud, W., Roca i Cabarrocas, P., Tchakarov, S., Kleider, J.P. (2004) UV–visible sensors based on polymorphous silicon. Journal of Non-Crystalline Solids, 338. 749-753 doi:10.1016/j.jnoncrysol.2004.03.083
Nath, Madhumita, Chatterjee, P., Damon-Lacoste, J., Roca i Cabarrocas, P. (2008) Criteria for improved open-circuit voltage in a‐Si:H(N)∕c‐Si(P) front heterojunction with intrinsic thin layer solar cells. Journal of Applied Physics, 103 (3). 34506pp. doi:10.1063/1.2838459
Damon-Lacoste, J., Roca i Cabarrocas, P. (2009) Toward a better physical understanding of a-Si:H/c-Si heterojunction solar cells. Journal of Applied Physics, 105 (6). 63712pp. doi:10.1063/1.3091283
Vanderhaghen, R., Kasouit, S., Damon-Lacoste, J., Liu, F., Roca i Cabarrocas, P. (2004) Study of transport, trapping and recombination mechanisms in microcrystalline silicon by transient photoconductivity. Journal of Non-Crystalline Solids, 338. 336-340 doi:10.1016/j.jnoncrysol.2004.02.068
Gueunier-Farret, M.E., Bazin, C., Kleider, J.P., Longeaud, C., Bulkin, P., Daineka, D., Dao, T.H., Roca i Cabarrocas, P., Descamps, P., Kervyn de Meerendre, T., Leempoel, P., Meaudre, M., Meaudre, R. (2006) Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates. Journal of Non-Crystalline Solids, 352 (9) 1913-1916 doi:10.1016/j.jnoncrysol.2006.01.080
 
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