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Korte, L., Laades, A., Schmidt, M. (2006) Electronic states in a-Si:H/c-Si heterostructures. Journal of Non-Crystalline Solids, 352 (9) 1217-1220 doi:10.1016/j.jnoncrysol.2005.10.046

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Reference TypeJournal (article/letter/editorial)
TitleElectronic states in a-Si:H/c-Si heterostructures
JournalJournal of Non-Crystalline Solids
AuthorsKorte, L.Author
Laades, A.Author
Schmidt, M.Author
Year2006 (June)Volume352
Issue9
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2005.10.046Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID644287Long-form Identifiermindat:1:5:644287:7
GUID0
Full ReferenceKorte, L., Laades, A., Schmidt, M. (2006) Electronic states in a-Si:H/c-Si heterostructures. Journal of Non-Crystalline Solids, 352 (9) 1217-1220 doi:10.1016/j.jnoncrysol.2005.10.046
Plain TextKorte, L., Laades, A., Schmidt, M. (2006) Electronic states in a-Si:H/c-Si heterostructures. Journal of Non-Crystalline Solids, 352 (9) 1217-1220 doi:10.1016/j.jnoncrysol.2005.10.046
In(2006, June) Journal of Non-Crystalline Solids Vol. 352 (9) Elsevier BV

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Maydell, K.v., Korte, L., Laades, A., Stangl, R., Conrad, E., Lange, F., Schmidt, M. (2006) Characterization and optimization of the interface quality in amorphous/crystalline silicon heterojunction solar cells. Journal of Non-Crystalline Solids, 352 (9) 1958-1961 doi:10.1016/j.jnoncrysol.2005.12.027
Korte, L., Schmidt, M. (2008) Investigation of gap states in phosphorous-doped ultra-thin a-Si:H by near-UV photoelectron spectroscopy. Journal of Non-Crystalline Solids, 354 (19) 2138-2143 doi:10.1016/j.jnoncrysol.2007.09.010
Schmidt, M., Schoepke, A., Korte, L., Milch, O., Fuhs, W. (2004) Density distribution of gap states in extremely thin a-Si:H layers on crystalline silicon wafers. Journal of Non-Crystalline Solids, 338. 211-214 doi:10.1016/j.jnoncrysol.2004.02.055
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Wünsch, F., Citarella, G., Abdallah, O., Kunst, M. (2006) An inverted a-Si:H/c-Si hetero-junction for solar energy conversion. Journal of Non-Crystalline Solids, 352 (9) 1962-1966 doi:10.1016/j.jnoncrysol.2006.01.034
Gudovskikh, A.S., Kleider, J.P., Stangl, R. (2006) New approach to capacitance spectroscopy for interface characterization of a-Si:H/c-Si heterojunctions. Journal of Non-Crystalline Solids, 352 (9) 1213-1216 doi:10.1016/j.jnoncrysol.2005.11.100
Aoki, Takeshi (2006) Understanding the photoluminescence over 13-decade lifetime distribution in a-Si:H. Journal of Non-Crystalline Solids, 352 (9) 1138-1143 doi:10.1016/j.jnoncrysol.2005.11.118
Tripathi, S., Dusane, R.O. (2006) AMPS-1D simulation studies of electronic transport in n+-μc-Si:H thin films. Journal of Non-Crystalline Solids, 352 (9) 1105-1108 doi:10.1016/j.jnoncrysol.2005.11.132
Kounavis, P. (2006) The nature of the defect states above midgap and their role in the light-induced metastability of a-Si:H. Journal of Non-Crystalline Solids, 352 (9) 1068-1070 doi:10.1016/j.jnoncrysol.2005.11.073
Bobela, David C., Su, T., Taylor, P.C., Ganguly, G. (2006) Microscopic properties of silicon dihydride bonding in a-Si:H. Journal of Non-Crystalline Solids, 352 (9) 1041-1044 doi:10.1016/j.jnoncrysol.2006.01.062
 
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