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Rezek, B., Stuchlík, J., Kočka, J., Stemmer, A. (2005) Persistent microscopic charge patterns in amorphous silicon thin films for guided assembly of colloids. Journal of Non-Crystalline Solids, 351 (37) 3127-3131 doi:10.1016/j.jnoncrysol.2005.07.025

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Reference TypeJournal (article/letter/editorial)
TitlePersistent microscopic charge patterns in amorphous silicon thin films for guided assembly of colloids
JournalJournal of Non-Crystalline Solids
AuthorsRezek, B.Author
Stuchlík, J.Author
Kočka, J.Author
Stemmer, A.Author
Year2005 (October)Volume351
Issue37
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2005.07.025Search in ResearchGate
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Mindat Ref. ID643235Long-form Identifiermindat:1:5:643235:9
GUID0
Full ReferenceRezek, B., Stuchlík, J., Kočka, J., Stemmer, A. (2005) Persistent microscopic charge patterns in amorphous silicon thin films for guided assembly of colloids. Journal of Non-Crystalline Solids, 351 (37) 3127-3131 doi:10.1016/j.jnoncrysol.2005.07.025
Plain TextRezek, B., Stuchlík, J., Kočka, J., Stemmer, A. (2005) Persistent microscopic charge patterns in amorphous silicon thin films for guided assembly of colloids. Journal of Non-Crystalline Solids, 351 (37) 3127-3131 doi:10.1016/j.jnoncrysol.2005.07.025
In(2005, October) Journal of Non-Crystalline Solids Vol. 351 (37) Elsevier BV

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Rezek, B., Šípek, E., Ledinský, M., Krejza, P., Stuchlík, J., Fejfar, A., Kočka, J. (2008) Spatially localized current-induced crystallization of amorphous silicon films. Journal of Non-Crystalline Solids, 354 (19) 2305-2309 doi:10.1016/j.jnoncrysol.2007.10.045
Kočka, J., Mates, T., Ledinský, M., Stuchlíková, H., Stuchlík, J., Fejfar, A. (2008) A simple quality factor for characterization of thin silicon films. Journal of Non-Crystalline Solids, 354 (19) 2227-2230 doi:10.1016/j.jnoncrysol.2007.09.078
Vetushka, A., Ledinský, M., Stuchlík, J., Mates, T., Fejfar, A., Kočka, J. (2008) Mapping of mechanical stress in silicon thin films on silicon cantilevers by Raman microspectroscopy. Journal of Non-Crystalline Solids, 354 (19) 2235-2237 doi:10.1016/j.jnoncrysol.2007.09.072
Ledinský, M., Vetushka, A., Stuchlík, J., Mates, T., Fejfar, A., Kočka, J., Štěpánek, J. (2008) Crystallinity of the mixed phase silicon thin films by Raman spectroscopy. Journal of Non-Crystalline Solids, 354 (19) 2253-2257 doi:10.1016/j.jnoncrysol.2007.09.073
Honda, S., Mates, T., Rezek, B., Fejfar, A., Kočka, J. (2008) Microscopic study of the H2O vapor treatment of the silicon grain boundaries. Journal of Non-Crystalline Solids, 354 (19) 2310-2313 doi:10.1016/j.jnoncrysol.2007.09.107
Kodolbaş, A.O., Çomak, B., Bacıogˇlu, A., Öktü, Ö. (2005) Lateral photovoltage measurements in hydrogenated amorphous silicon and silicon-oxygen thin films. Journal of Non-Crystalline Solids, 351 (5) 426-431 doi:10.1016/j.jnoncrysol.2005.01.005
Kočka, J., Mates, T., Ledinský, M., Stuchlíková, H., Stuchlík, J., Fejfar, A. (2008) Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses. Journal of Non-Crystalline Solids, 354 (19) 2451-2454 doi:10.1016/j.jnoncrysol.2007.09.079
Verveniotis, Elisseos, Šípek, Emil, Stuchlík, Jiří, Kočka, Jan, Rezek, Bohuslav (2012) Generating ordered Si nanocrystals via atomic force microscopy. Journal of Non-Crystalline Solids, 358 (17) 2118-2121 doi:10.1016/j.jnoncrysol.2011.12.018
Ledinský, M., Fekete, L., Stuchlík, J., Mates, T., Fejfar, A., Kočka, J. (2006) Characterization of mixed phase silicon by Raman spectroscopy. Journal of Non-Crystalline Solids, 352 (9) 1209-1212 doi:10.1016/j.jnoncrysol.2005.10.072
Fejfar, A., Mates, T., Čertı́k, O., Rezek, B., Stuchlı́k, J., Pelant, I., Kočka, J. (2004) Model of electronic transport in microcrystalline silicon and its use for prediction of device performance. Journal of Non-Crystalline Solids, 338. 303-309 doi:10.1016/j.jnoncrysol.2004.02.063
Rezek, B., Mates, T., Stuchlı́k, J., Kočka, J., Stemmer, A. (2003) Charge storage in undoped hydrogenated amorphous silicon by ambient atomic force microscopy. Applied Physics Letters, 83 (9). 1764-1766 doi:10.1063/1.1606872
 
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