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Ogihara, C, Takemura, H, Yoshida, H, Morigaki, K (2000) Lifetime distribution of PL under pulsed excitation in hydrogenated amorphous silicon based films. Journal of Non-Crystalline Solids, 266. 574-577 doi:10.1016/s0022-3093(99)00731-0

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Reference TypeJournal (article/letter/editorial)
TitleLifetime distribution of PL under pulsed excitation in hydrogenated amorphous silicon based films
JournalJournal of Non-Crystalline Solids
AuthorsOgihara, CAuthor
Takemura, HAuthor
Yoshida, HAuthor
Morigaki, KAuthor
Year2000 (May)Volume266
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(99)00731-0Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID638726Long-form Identifiermindat:1:5:638726:0
GUID0
Full ReferenceOgihara, C, Takemura, H, Yoshida, H, Morigaki, K (2000) Lifetime distribution of PL under pulsed excitation in hydrogenated amorphous silicon based films. Journal of Non-Crystalline Solids, 266. 574-577 doi:10.1016/s0022-3093(99)00731-0
Plain TextOgihara, C, Takemura, H, Yoshida, H, Morigaki, K (2000) Lifetime distribution of PL under pulsed excitation in hydrogenated amorphous silicon based films. Journal of Non-Crystalline Solids, 266. 574-577 doi:10.1016/s0022-3093(99)00731-0
In(2000) Journal of Non-Crystalline Solids Vol. 266. Elsevier BV

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Morigaki, K, Hikita, H (2002) Light-induced defect creation under intense optical excitation in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 299. 455-459 doi:10.1016/s0022-3093(01)01018-3
Ogihara, C., Yu, X., Morigaki, K. (2008) Analysis of lifetime distribution of defect luminescence in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 354 (19) 2121-2125 doi:10.1016/j.jnoncrysol.2007.10.080
Ogihara, C, Takemura, H, Yoshimura, T, Morigaki, K (2002) Lifetime and intensity of photoluminescence after light induced creation of dangling bonds in a-Si:H. Journal of Non-Crystalline Solids, 299. 637-641 doi:10.1016/s0022-3093(01)01027-4
Shimizu, K (2000) Photoinduced structural change and restoration of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 266. 486-490 doi:10.1016/s0022-3093(99)00842-x
Beyer, W. (2000) Infrared absorption and hydrogen effusion of hydrogenated amorphous silicon-oxide films. Journal of Non-Crystalline Solids, 266. 845-849 doi:10.1016/s0022-3093(99)00853-4
Robertson, John (2000) Growth mechanism of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 266. 79-83 doi:10.1016/s0022-3093(00)00012-0
Ogihara, C., Ishimura, H., Kinoshita, T., Ikeda, K., Morigaki, K. (1996) Distribution of lifetime of photoluminescence in band-edge modulated a-Si1 − xNx:H films. Journal of Non-Crystalline Solids, 198. 255-258 doi:10.1016/0022-3093(95)00703-2
Beyer, W, Zastrow, U (2000) Comparative study of hydrogen stability in hydrogenated amorphous and crystalline silicon. Journal of Non-Crystalline Solids, 266. 206-210 doi:10.1016/s0022-3093(99)00822-4
Hata, N, Stradins, P, Fortmann, C.M, Fujiwara, H, Kondo, M, Matsuda, A (2000) Light-induced, reversible, above-gap, optical changes in hydrogenated amorphous silicon films. Journal of Non-Crystalline Solids, 266. 491-495 doi:10.1016/s0022-3093(99)00783-8
Verleg, P.A.W.E., Dijkhuis, Jaap I. (2000) Generation–recombination noise studied in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 266. 232-236 doi:10.1016/s0022-3093(99)00827-3
Droz, C, Goerlitzer, M, Wyrsch, N, Shah, A (2000) Electronic transport in hydrogenated microcrystalline silicon: similarities with amorphous silicon. Journal of Non-Crystalline Solids, 266. 319-324 doi:10.1016/s0022-3093(99)00718-8
 
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