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Buitrago, R.H, Arce, R.D, Koropecki, R.R (1993) Effect of the deposition variables on amorphous silicon stability. Journal of Non-Crystalline Solids, 164. 259-262 doi:10.1016/0022-3093(93)90540-e

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Reference TypeJournal (article/letter/editorial)
TitleEffect of the deposition variables on amorphous silicon stability
JournalJournal of Non-Crystalline Solids
AuthorsBuitrago, R.HAuthor
Arce, R.DAuthor
Koropecki, R.RAuthor
Year1993 (December)Volume164
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(93)90540-eSearch in ResearchGate
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Mindat Ref. ID633355Long-form Identifiermindat:1:5:633355:7
GUID0
Full ReferenceBuitrago, R.H, Arce, R.D, Koropecki, R.R (1993) Effect of the deposition variables on amorphous silicon stability. Journal of Non-Crystalline Solids, 164. 259-262 doi:10.1016/0022-3093(93)90540-e
Plain TextBuitrago, R.H, Arce, R.D, Koropecki, R.R (1993) Effect of the deposition variables on amorphous silicon stability. Journal of Non-Crystalline Solids, 164. 259-262 doi:10.1016/0022-3093(93)90540-e
In(1993) Journal of Non-Crystalline Solids Vol. 164. Elsevier BV

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Zedlitz, R., Lotter, E., Heintze, M. (1993) Amorphous hydrogenated silicon carbon from VHF deposition. Journal of Non-Crystalline Solids, 164. 1031-1034 doi:10.1016/0022-3093(93)91174-2
Koropecki, R.R., Arce, R., De Bernardez, L.S., Buitrago, R. (1985) Oxidation mechanisms in high pressure dc-sputtered a-Si films. Journal of Non-Crystalline Solids, 74 (1) 11-17 doi:10.1016/0022-3093(85)90395-3
Koropecki, R.R., Arce, R.D., Schmidt, J.A. (2004) Infrared studies combined with hydrogen effusion experiments on nanostructured porous silicon. Journal of Non-Crystalline Solids, 338. 159-162 doi:10.1016/j.jnoncrysol.2004.02.044
Jackson, Warren (1993) Effect of hydrogen exchange on diffusion and evolution in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 164. 263-268 doi:10.1016/0022-3093(93)90541-5
Tsukada, T. (1993) Amorphous silicon thin-film transistors. Journal of Non-Crystalline Solids, 164. 721-726 doi:10.1016/0022-3093(93)91099-o
Rubinelli, F.A., Albornoz, S., Buitrago, R.H. (1986) Amorphous-crystalline silicon heterojunction in equilibrium. Journal of Non-Crystalline Solids, 85 (1) 1-12 doi:10.1016/0022-3093(86)90073-6
Schmidt, J.A., Koropecki, R.R., Arce, R., Dussan, A., Buitrago, R.H. (2004) Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations. Journal of Non-Crystalline Solids, 338. 322-325 doi:10.1016/j.jnoncrysol.2004.02.065
Tong, B.Y., Du, J. (1993) In search of a normal Hall effect in amorphous silicon. Journal of Non-Crystalline Solids, 164. 453-456 doi:10.1016/0022-3093(93)90587-n
Nickel, N.H., Jackson, W.B. (1993) The effect of post-hydrogenation on the equilibrium and metastable properties of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 164. 281-284 doi:10.1016/0022-3093(93)90545-9
Schauer, Frantisěk, Zmeškal, Oldřich (1993) Temperature dependent SCLC in amorphous silicon. Journal of Non-Crystalline Solids, 164. 537-540 doi:10.1016/0022-3093(93)90608-z
Martins, R., Fantoni, A., Vieira, M. (1993) Tailoring defects on amorphous silicon pin devices. Journal of Non-Crystalline Solids, 164. 671-674 doi:10.1016/0022-3093(93)91087-j
 
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