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Fischer, R, Gobel, E.O (1989) Carrier relaxation in a-Si1−xCx:H studied by picosecond photoluminescence spectroscopy. Journal of Non-Crystalline Solids, 114. 570-572 doi:10.1016/0022-3093(89)90653-4

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Reference TypeJournal (article/letter/editorial)
TitleCarrier relaxation in a-Si1−xCx:H studied by picosecond photoluminescence spectroscopy
JournalJournal of Non-Crystalline Solids
AuthorsFischer, RAuthor
Gobel, E.OAuthor
Year1989 (December)Volume114
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(89)90653-4Search in ResearchGate
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Mindat Ref. ID629245Long-form Identifiermindat:1:5:629245:8
GUID0
Full ReferenceFischer, R, Gobel, E.O (1989) Carrier relaxation in a-Si1−xCx:H studied by picosecond photoluminescence spectroscopy. Journal of Non-Crystalline Solids, 114. 570-572 doi:10.1016/0022-3093(89)90653-4
Plain TextFischer, R, Gobel, E.O (1989) Carrier relaxation in a-Si1−xCx:H studied by picosecond photoluminescence spectroscopy. Journal of Non-Crystalline Solids, 114. 570-572 doi:10.1016/0022-3093(89)90653-4
In(1989) Journal of Non-Crystalline Solids Vol. 114. Elsevier BV

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Bort, M, Carius, R, Fuhs, W (1989) Lifetime distribution of the photoluminescence of a-Si:H and a-Si1−xCx:H. Journal of Non-Crystalline Solids, 114. 280-282 doi:10.1016/0022-3093(89)90137-3
Zhang, Zhouyao, Qi, Mingwei, Chen, Jingyi, Cheng, Ruguang (1989) Stress in a-Si1−xCx:H studied by (n, −n) double crystal diffractometry. Journal of Non-Crystalline Solids, 114. 510-512 doi:10.1016/0022-3093(89)90633-9
Agrawal, Bal K., Yadav, P.S., Ghosh, B.K. (1989) Vibrational excitations in a-Si1−xCx:H alloys. Journal of Non-Crystalline Solids, 114. 519-521 doi:10.1016/0022-3093(89)90636-4
Liedtke, S, Lips, K, Bort, M, Jahn, K, Fuhs, W (1989) Photoluminescence and optically detected magnetic resonance of a-Si1−xCx:H films. Journal of Non-Crystalline Solids, 114. 522-524 doi:10.1016/0022-3093(89)90637-6
Pohlmann, A., Fischer, R., Brüggemann, R., Stolz, W., Göbel, E.O. (1991) Transient photoconductivity in amorphous Si1−xCx:H. Journal of Non-Crystalline Solids, 137. 547-550 doi:10.1016/s0022-3093(05)80176-0
Davis, E.A, Bayliss, S.C, Asal, R, Manssor, M (1989) Free-carrier behaviour in a-Si1−yNiy:H. Journal of Non-Crystalline Solids, 114. 465-467 doi:10.1016/0022-3093(89)90618-2
Wiech, G, Zahorowsky, W, Weiser, G (1989) Local bonding of Si in Si1−xCx alloys studied by x-ray emission. Journal of Non-Crystalline Solids, 114. 483-485 doi:10.1016/0022-3093(89)90624-8
Yamaguchi, M., Fujita, Y., Morigaki, K. (1989) Photoluminescence of a-Si1−xAux:H films: nonradiative nature of Au centers. Journal of Non-Crystalline Solids, 114. 283-285 doi:10.1016/0022-3093(89)90138-5
Matsunami, Hiroyuki, Yoshimoto, Masahiro, Fujii, Yoshihisa, Saraie, Junji (1983) Polarization effects in AC electroluminescence of a-Si1−xCx:H. Journal of Non-Crystalline Solids, 59. 569-572 doi:10.1016/0022-3093(83)90647-6
Carius, R., Finger, F. (1989) Influence of the defect concentration on the recombination in electron bombarded a-Si:Ge:H alloys studied by photoluminescence and electron spin resonance. Journal of Non-Crystalline Solids, 114. 549-551 doi:10.1016/0022-3093(89)90646-7
Evangelisti, F. (1993) Atomic and electronic structure of a-Si1−xCx:H alloys. Journal of Non-Crystalline Solids, 164. 1009-1014 doi:10.1016/0022-3093(93)91169-4
 
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