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Sotiropoulos, J, Fuhs, W (1989) Electronic structure of bismuth modified a-Ge25Se75-xBix films. Journal of Non-Crystalline Solids, 114. 97-99 doi:10.1016/0022-3093(89)90080-x

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Reference TypeJournal (article/letter/editorial)
TitleElectronic structure of bismuth modified a-Ge25Se75-xBix films
JournalJournal of Non-Crystalline Solids
AuthorsSotiropoulos, JAuthor
Fuhs, WAuthor
Year1989 (December)Volume114
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(89)90080-xSearch in ResearchGate
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Mindat Ref. ID629090Long-form Identifiermindat:1:5:629090:4
GUID0
Full ReferenceSotiropoulos, J, Fuhs, W (1989) Electronic structure of bismuth modified a-Ge25Se75-xBix films. Journal of Non-Crystalline Solids, 114. 97-99 doi:10.1016/0022-3093(89)90080-x
Plain TextSotiropoulos, J, Fuhs, W (1989) Electronic structure of bismuth modified a-Ge25Se75-xBix films. Journal of Non-Crystalline Solids, 114. 97-99 doi:10.1016/0022-3093(89)90080-x
In(1989) Journal of Non-Crystalline Solids Vol. 114. Elsevier BV

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Sharma, Ashwani K., Bhatia, K.L. (1989) Frequency-dependent electrical conductivity of bismuth-modified amorphous semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 109 (1) 95-104 doi:10.1016/0022-3093(89)90447-x
Fuhs, W., Finger, F. (1989) Defects and recombination in a-Si:1−xGex:H. Journal of Non-Crystalline Solids, 114. 387-392 doi:10.1016/0022-3093(89)90594-2
Sotiropoulos, J, Fuhs, W, Nickel, N (1993) Structure and optical properties of a-Si1−xNx:H alloys. Journal of Non-Crystalline Solids, 164. 881-884 doi:10.1016/0022-3093(93)91138-s
Jank, W., Hafner, J. (1989) Electronic structure of molton Si, Ge, and GaAs. Journal of Non-Crystalline Solids, 114. 16-18 doi:10.1016/0022-3093(89)90055-0
Liedtke, S, Lips, K, Bort, M, Jahn, K, Fuhs, W (1989) Photoluminescence and optically detected magnetic resonance of a-Si1−xCx:H films. Journal of Non-Crystalline Solids, 114. 522-524 doi:10.1016/0022-3093(89)90637-6
Jahn, Karin, Fuhs, Walther, Pierz, Klaus (1989) Field-dependent recombination in a-Si:H. Journal of Non-Crystalline Solids, 114. 307-309 doi:10.1016/0022-3093(89)90146-4
Kounavis, P, Mytikineou, E (1989) Drift mobility and photoconductivity for P and N-type sputtered Ge25Se75−xBix films. Journal of Non-Crystalline Solids, 114. 103-105 doi:10.1016/0022-3093(89)90082-3
Bort, M, Carius, R, Fuhs, W (1989) Lifetime distribution of the photoluminescence of a-Si:H and a-Si1−xCx:H. Journal of Non-Crystalline Solids, 114. 280-282 doi:10.1016/0022-3093(89)90137-3
Pierz, K, Fuhs, W, Mell, H (1989) Correlation between defect density and Fermi-level position in a-Si:H. Journal of Non-Crystalline Solids, 114. 651-653 doi:10.1016/0022-3093(89)90679-0
Schütte, Susanne, Finger, Friedhelm, Fuhs, Walther (1989) Effect of electron bombardment and annealing on the hyperfine structure in a-Si:H (P) Journal of Non-Crystalline Solids, 114. 411-413 doi:10.1016/0022-3093(89)90601-7
Fritzsche, H. (1989) Low temperature electronic transport in non-crystalline semiconductors. Journal of Non-Crystalline Solids, 114. 1-6 doi:10.1016/0022-3093(89)90052-5
 
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