Aleshkin, V. Ya., Baidus, N. V., Vikhrova, O. V., Dubinov, A. A., Zvonkov, B. N., Krasilnik, Z. F., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Rykov, A. V., Samartsev, I. V., Yurasov, D. V. (2018) Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate. Technical Physics Letters, 44. 735-738 doi:10.1134/s1063785018080175

See Also

These are possibly similar items as determined by title/reference text matching only.

	Aleshkin, V. Ya., Baidus, N. V., Dubinov, A. A., Fefelov, A. G., Krasilnik, Z. F., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Pavlov, D. A., Samartsev, I. V., Skorokhodov, E. V., Shaleev, M. V., Sushkov, A. A., Yablonskiy, A. N., Yunin, P. A., Yurasov, D. V. (2016) Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate. Applied Physics Letters, 109 (6). 61111pp. doi:10.1063/1.4961059
	Aleshkin, V. Ya., Dikareva, N. V., Dubinov, A. A., Zvonkov, B. N., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Yunin, P. A., Yurasov, D. V. (2015) The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer. Technical Physics Letters, 41. 648-650 doi:10.1134/s1063785015070020
	Samartsev, I V, Nekorkin, S M, Zvonkov, B N, Dikareva, N V, Zdoroveyshchev, A V, Rykov, A V, Baidus, N V (2018) 1.06 μm wavelength photodetectors with metamorphic buffer layers grown on GaAs substrates. Journal of Physics: Conference Series, 1124. 41037pp. doi:10.1088/1742-6596/1124/4/041037
	Aleshkin, V. Ya., Dikareva, N. V., Dubinov, A. A., Zvonkov, B. N., Krasilnik, Z. F., Nekorkin, S. M. (2015) Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates. Technical Physics Letters, 41. 304-306 doi:10.1134/s1063785015030177
	Aleshkin, V. Ya., Dubinov, A. A., Kudryavtsev, K. E., Rumyantsev, V. V., Tonkikh, A. A., Zakharov, N. D., Zvonkov, B. N. (2014) 1.3 μm photoluminescence of Ge/GaAs multi-quantum-well structure. Journal of Applied Physics, 115 (4). 43512pp. doi:10.1063/1.4863121
	Yurasov, D. V., Novikov, A. V., Baidakova, N. A., Aleshkin, V. Ya., Bushuykin, P. A., Andreev, B. A., Yunin, P. A., Drozdov, M. N., Yablonskiy, A. N., Dubinov, A. A., Krasilnik, Z. F. (2020) Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates. Journal of Applied Physics, 127 (16) 165701pp. doi:10.1063/1.5140072
	Nekorkin, S. M., Karzanova, M. V., Dikareva, N. V., Zvonkov, B. N., Aleshkin, V. Ya. (2014) Experimental determination of the optimum number of quantum wells in multiwell heterolasers with radiation leakage into a substrate. Technical Physics Letters, 40. 432-434 doi:10.1134/s1063785014050228
	Kudryavtsev, K. E., Rumyantsev, V. V., Utochkin, V. V., Fadeev, M. A., Aleshkin, V. Ya., Dubinov, A. A., Zholudev, M. S., Mikhailov, N. N., Dvoretskii, S. A., Remesnik, V. G., Teppe, F., Gavrilenko, V. I., Morozov, S. V. (2021) Toward Peltier-cooled mid-infrared HgCdTe lasers: Analyzing the temperature quenching of stimulated emission at ∼6 μm wavelength from HgCdTe quantum wells. Journal of Applied Physics, 130 (21) 214302pp. doi:10.1063/5.0071908
	Morozov, S. V., Kryzhkov, D. I., Yablonsky, A. N., Aleshkin, V. Ya., Krasilnik, Z. F., Zvonkov, B. N., Vikhrova, O. V. (2014) Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures. Applied Physics Letters, 104 (2). 21108pp. doi:10.1063/1.4862176
	Baidus, Nikolay, Aleshkin, Vladimir, Dubinov, Alexander, Kudryavtsev, Konstantin, Nekorkin, Sergei, Novikov, Alexey, Pavlov, Dmiriy, Rykov, Artem, Sushkov, Artem, Shaleev, Mikhail, Yunin, Pavel, Yurasov, Dmitriy, Krasilnik, Zakhariy (2018) MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates. Crystals, 8 (8) 311 doi:10.3390/cryst8080311
	Dorokhin, M. V., Zvonkov, B. N., Demina, P. B., Dikareva, N. V., Zdoroveishchev, A. V., Kudrin, A. V., Vikhrova, O. V., Samartsev, I. V., Nekorkin, S. M. (2021) Methods for Switching Radiation Polarization in GaAs Laser Diodes. Technical Physics, 66 (11) 1194-1199 doi:10.1134/s106378422109005x