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Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P. (2018) Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate. Technical Physics Letters, 44. 81-83 doi:10.1134/s106378501801011x

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Reference TypeJournal (article/letter/editorial)
TitleHexagonal AlN Layers Grown on Sulfided Si(100) Substrate
JournalTechnical Physics Letters
AuthorsBessolov, V. N.Author
Gushchina, E. V.Author
Konenkova, E. V.Author
L’vova, T. V.Author
Panteleev, V. N.Author
Shcheglov, M. P.Author
Year2018 (January)Volume44
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s106378501801011xSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID6209701Long-form Identifiermindat:1:5:6209701:7
GUID0
Full ReferenceBessolov, V. N., Gushchina, E. V., Konenkova, E. V., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P. (2018) Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate. Technical Physics Letters, 44. 81-83 doi:10.1134/s106378501801011x
Plain TextBessolov, V. N., Gushchina, E. V., Konenkova, E. V., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P. (2018) Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate. Technical Physics Letters, 44. 81-83 doi:10.1134/s106378501801011x
In(n.d.) Technical Physics Letters Vol. 44. Pleiades Publishing Ltd

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Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., Konenkov, S. D., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P. (2019) Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy. Technical Physics, 64 (4). 531-534 doi:10.1134/s1063784219040054
Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Shcheglov, M. P., Kibalov, D. S., Smirnov, V. K. (2018) Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate. Technical Physics Letters, 44. 525-527 doi:10.1134/s1063785018060172
Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P. (2019) Epitaxy of GaN(0001) and GaN(10 $$\bar {1}$$ 1) Layers on Si(100) Substrate. Technical Physics Letters, 45. 529-532 doi:10.1134/s106378501906004x
Bessolov, V. N., Gruzinov, N. D., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P. (2020) Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering. Technical Physics Letters, 46 (4) 382-384 doi:10.1134/s1063785020040185
Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N. (2020) Hydride Vapor-Phase Epitaxy of a Semipolar AlN(10$$\bar {1}$$2) Layer on a Nanostructured Si(100) Substrate. Technical Physics Letters, 46 (1) 59-61 doi:10.1134/s1063785020010174
Bessolov, V. N., Konenkova, E. V., Panteleev, V. N. (2020) Plastic Relaxation of Stressed Semipolar AlN($$10\bar {1}1$$) Layer Synthesized on a Nanopatterned Si(100) Substrate. Technical Physics, 65 (12) 2031-2034 doi:10.1134/s1063784220120051
Bessolov, V. N., Konenkova, E. V., Kukushkin, S. A., Nikolaev, V. I., Osipov, A. V., Sharofidinov, Sh., Shcheglov, M. P. (2013) Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate. Technical Physics Letters, 39. 274-276 doi:10.1134/s106378501303019x
Bessolov, V. N., Konenkova, E. V., Kukushkin, S. A., Myasoedov, A. V., Osipov, A. V., Rodin, S. N., Shcheglov, M. P., Feoktistov, N. A. (2014) Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer. Technical Physics Letters, 40. 386-388 doi:10.1134/s1063785014050046
Bessolov, V. N., Zhilyaev, Yu. V., Konenkova, E. V., Poletaev, N. K., Sharofidinov, Sh., Shcheglov, M. P. (2012) Epitaxy of gallium nitride in semi-polar direction on silicon. Technical Physics Letters, 38. 9-11 doi:10.1134/s1063785012010051
Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Solomnikova, A. V. (2023) Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate. Technical Physics, 68 (11) 395-398 doi:10.1134/s1063784223900048
Bessolov, V. N., Konenkova, E. V. (2024) Semipolar Wide-Band III–N-Layers on a Silicon Substrate: Orientation Controlling Epitaxy and the Properties of Structures (Review). Technical Physics, 69 (5). doi:10.1134/s1063784224040054
 
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