| Reference Type | Journal (article/letter/editorial) |
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| Title | Erratum to: “Dynamics of Induced Base Layer Formation in Tunnel MIS-Transistors under Strong Electric Fields” |
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| Journal | Technical Physics Letters |
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| Authors | Belov, S. V. | Author |
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| Ostroumova, E. V. | Author |
| Rogacheva, E. A. | Author |
| Year | 2015 (April) | Volume | 41 |
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| Publisher | Pleiades Publishing Ltd |
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| DOI | doi:10.1134/s106378501504032xSearch in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 6208909 | Long-form Identifier | mindat:1:5:6208909:0 |
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| GUID | 0 |
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| Full Reference | Belov, S. V., Ostroumova, E. V., Rogacheva, E. A. (2015) Erratum to: “Dynamics of Induced Base Layer Formation in Tunnel MIS-Transistors under Strong Electric Fields”. Technical Physics Letters, 41. 409 doi:10.1134/s106378501504032x |
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| Plain Text | Belov, S. V., Ostroumova, E. V., Rogacheva, E. A. (2015) Erratum to: “Dynamics of Induced Base Layer Formation in Tunnel MIS-Transistors under Strong Electric Fields”. Technical Physics Letters, 41. 409 doi:10.1134/s106378501504032x |
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| In | (n.d.) Technical Physics Letters Vol. 41. Pleiades Publishing Ltd |
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