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Svetukhin, V. V., Kadochkin, A. S., Risovanyi, V. D. (2013) Determining the parameters of helium accumulation centers in irradiated silicon carbide from thermodesorption spectra. Technical Physics Letters, 39. 226-228 doi:10.1134/s1063785013020247

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Reference TypeJournal (article/letter/editorial)
TitleDetermining the parameters of helium accumulation centers in irradiated silicon carbide from thermodesorption spectra
JournalTechnical Physics Letters
AuthorsSvetukhin, V. V.Author
Kadochkin, A. S.Author
Risovanyi, V. D.Author
Year2013 (February)Volume39
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063785013020247Search in ResearchGate
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Mindat Ref. ID6208217Long-form Identifiermindat:1:5:6208217:6
GUID0
Full ReferenceSvetukhin, V. V., Kadochkin, A. S., Risovanyi, V. D. (2013) Determining the parameters of helium accumulation centers in irradiated silicon carbide from thermodesorption spectra. Technical Physics Letters, 39. 226-228 doi:10.1134/s1063785013020247
Plain TextSvetukhin, V. V., Kadochkin, A. S., Risovanyi, V. D. (2013) Determining the parameters of helium accumulation centers in irradiated silicon carbide from thermodesorption spectra. Technical Physics Letters, 39. 226-228 doi:10.1134/s1063785013020247
In(n.d.) Technical Physics Letters Vol. 39. Pleiades Publishing Ltd

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Svetukhin, V. V., Suslov, D. N., Risovanyi, V. D., Salikh-zade, P. F. (2005) Mechanisms of Helium Thermodesorption from Irradiated Boron Carbide. Atomic Energy, 98 (3) 177-180 doi:10.1007/s10512-005-0189-3
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Kukushkin, S. A., Lukyanov, A. V., Osipov, A. V., Feoktistov, N. A. (2014) Epitaxial silicon carbide on a 6″ silicon wafer. Technical Physics Letters, 40. 36-39 doi:10.1134/s1063785014010088
Pchelintseva, T. S., Prokof’eva, V. K., Svetukhin, V. V., Ambrozevich, A. S., Rygalin, B. N., Lysenko, L. N. (2001) A study of the zirconium-oxygen interaction in silicon. Technical Physics Letters, 27. 852-854 doi:10.1134/1.1414553
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