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Izhnin, I. I., Savitskii, G. V., Fitsych, E. I., Dvoretsky, S. A., Mikhailov, N. N., Varavin, V. S., Mynbaev, K. D. (2013) Relaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions. Technical Physics Letters, 39. 16-19 doi:10.1134/s1063785013010136

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Reference TypeJournal (article/letter/editorial)
TitleRelaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions
JournalTechnical Physics Letters
AuthorsIzhnin, I. I.Author
Savitskii, G. V.Author
Fitsych, E. I.Author
Dvoretsky, S. A.Author
Mikhailov, N. N.Author
Varavin, V. S.Author
Mynbaev, K. D.Author
Year2013 (January)Volume39
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063785013010136Search in ResearchGate
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Mindat Ref. ID6208095Long-form Identifiermindat:1:5:6208095:6
GUID0
Full ReferenceIzhnin, I. I., Savitskii, G. V., Fitsych, E. I., Dvoretsky, S. A., Mikhailov, N. N., Varavin, V. S., Mynbaev, K. D. (2013) Relaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions. Technical Physics Letters, 39. 16-19 doi:10.1134/s1063785013010136
Plain TextIzhnin, I. I., Savitskii, G. V., Fitsych, E. I., Dvoretsky, S. A., Mikhailov, N. N., Varavin, V. S., Mynbaev, K. D. (2013) Relaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions. Technical Physics Letters, 39. 16-19 doi:10.1134/s1063785013010136
In(n.d.) Technical Physics Letters Vol. 39. Pleiades Publishing Ltd

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Izhnin, I. I., Dvoretsky, S. A., Mynbaev, K. D., Fitsych, O. I., Mikhailov, N. N., Varavin, V. S., Pociask-Bialy, M., Voitsekhovskii, A. V., Sheregii, E. (2014) Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic. Journal of Applied Physics, 115 (16). 163501pp. doi:10.1063/1.4872246
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Izhnin, I. I., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, Yu. G., Varavin, V. S., Mynbaev, K. D., Pociask, M. (2007) Conductivity type conversion in ion-milled p-HgCdTe:As heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 91 (13). 132106pp. doi:10.1063/1.2789782
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