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Kudryk, Ya. Ya., Zinovchuk, A. V. (2012) The effect of current crowding on the internal quantum efficiency of InAsSb/InAs light-emitting diodes. Technical Physics Letters, 38. 456-459 doi:10.1134/s1063785012050252

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Reference TypeJournal (article/letter/editorial)
TitleThe effect of current crowding on the internal quantum efficiency of InAsSb/InAs light-emitting diodes
JournalTechnical Physics Letters
AuthorsKudryk, Ya. Ya.Author
Zinovchuk, A. V.Author
Year2012 (May)Volume38
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063785012050252Search in ResearchGate
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Mindat Ref. ID6207977Long-form Identifiermindat:1:5:6207977:4
GUID0
Full ReferenceKudryk, Ya. Ya., Zinovchuk, A. V. (2012) The effect of current crowding on the internal quantum efficiency of InAsSb/InAs light-emitting diodes. Technical Physics Letters, 38. 456-459 doi:10.1134/s1063785012050252
Plain TextKudryk, Ya. Ya., Zinovchuk, A. V. (2012) The effect of current crowding on the internal quantum efficiency of InAsSb/InAs light-emitting diodes. Technical Physics Letters, 38. 456-459 doi:10.1134/s1063785012050252
In(n.d.) Technical Physics Letters Vol. 38. Pleiades Publishing Ltd

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Zinovchuk, A. V., Malyutenko, O. Yu., Malyutenko, V. K., Podoltsev, A. D., Vilisov, A. A. (2008) The effect of current crowding on the heat and light pattern in high-power AlGaAs light emitting diodes. Journal of Applied Physics, 104 (3). 33115pp. doi:10.1063/1.2968220
Grebenshchikova, E. A., Starostenko, D. A., Sherstnev, V. V., Konovalov, G. G., Andreev, I. A., Serebrennikova, O. Yu., Il’inskaya, N. D., Yakovlev, Yu. P. (2012) Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes. Technical Physics Letters, 38. 470-473 doi:10.1134/s1063785012050239
Popov, A. A., Stepanov, M. V., Sherstnev, V. V., Yakovlev, Yu. P. (1998) InAsSb light-emitting diodes for the detection of CO2 (λ=4.3 μm). Technical Physics Letters, 24. 596-598 doi:10.1134/1.1262210
Malyutenko, V. K., Bolgov, S. S., Podoltsev, A. D. (2010) Current crowding effect on the ideality factor and efficiency droop in blue lateral InGaN/GaN light emitting diodes. Applied Physics Letters, 97 (25). 251110pp. doi:10.1063/1.3529470
Malyutenko, V. K., Malyutenko, O. Yu., Podoltsev, A. D., Kucheryavaya, I. N., Matveev, B. A., Remennyi, M. A., Stus’, N. M. (2001) Current crowding in InAsSb light-emitting diodes. Applied Physics Letters, 79 (25). 4228-4230 doi:10.1063/1.1424065
Belyaev, A. E., Boltovets, N. S., Ivanov, V. N., Konakova, R. V., Kudryk, Ya. Ya., Lytvyn, P. M., Milenin, V. V., Sveshnikov, Yu. N. (2005) Thermal stability of multilayer contacts on gallium nitride. Technical Physics Letters, 31. 1078-1081 doi:10.1134/1.2150904
Belomyttsev, S. Ya., Ryzhov, V. V. (2001) The electron pinch lifetime in high-current rod pinch diodes. Technical Physics Letters, 27. 608-610 doi:10.1134/1.1388960
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Malyutenko, V. K., Malyutenko, O. Yu., Zinovchuk, A. V. (2006) Room-temperature InAsSbP∕InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5μm) dynamic scene projection. Applied Physics Letters, 89 (20). 201114pp. doi:10.1063/1.2390655
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