| Reference Type | Journal (article/letter/editorial) |
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| Title | Effect of electron overheating on the tunneling current of a molecular transistor |
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| Journal | Technical Physics Letters |
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| Authors | Pogosov, V. V. | Author |
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| Vasyutin, E. V. | Author |
| Babich, A. V. | Author |
| Year | 2007 (September) | Volume | 33 |
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| Publisher | Pleiades Publishing Ltd |
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| DOI | doi:10.1134/s1063785007090015Search in ResearchGate |
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| Generate Citation Formats |
| Mindat Ref. ID | 6206463 | Long-form Identifier | mindat:1:5:6206463:9 |
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| GUID | 0 |
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| Full Reference | Pogosov, V. V., Vasyutin, E. V., Babich, A. V. (2007) Effect of electron overheating on the tunneling current of a molecular transistor. Technical Physics Letters, 33. 719-722 doi:10.1134/s1063785007090015 |
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| Plain Text | Pogosov, V. V., Vasyutin, E. V., Babich, A. V. (2007) Effect of electron overheating on the tunneling current of a molecular transistor. Technical Physics Letters, 33. 719-722 doi:10.1134/s1063785007090015 |
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| In | (n.d.) Technical Physics Letters Vol. 33. Pleiades Publishing Ltd |
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