Lezhava, N. G., Bibilashvili, A. P., Gerasimov, A. B. (2005) Using intrinsic gallium arsenide oxide for insulating active elements in GaAs-based integrated circuits. Technical Physics Letters, 31. 75-76 doi:10.1134/1.1859506

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Reference Type	Journal (article/letter/editorial)
Title	Using intrinsic gallium arsenide oxide for insulating active elements in GaAs-based integrated circuits
Journal	Technical Physics Letters
Authors	Lezhava, N. G.		Author
	Bibilashvili, A. P.		Author
	Gerasimov, A. B.		Author
Year	2005 (January)	Volume	31
Publisher	Pleiades Publishing Ltd
DOI	doi:10.1134/1.1859506Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	6205528	Long-form Identifier	mindat:1:5:6205528:8
GUID	0
Full Reference	Lezhava, N. G., Bibilashvili, A. P., Gerasimov, A. B. (2005) Using intrinsic gallium arsenide oxide for insulating active elements in GaAs-based integrated circuits. Technical Physics Letters, 31. 75-76 doi:10.1134/1.1859506
Plain Text	Lezhava, N. G., Bibilashvili, A. P., Gerasimov, A. B. (2005) Using intrinsic gallium arsenide oxide for insulating active elements in GaAs-based integrated circuits. Technical Physics Letters, 31. 75-76 doi:10.1134/1.1859506
In	(n.d.) Technical Physics Letters Vol. 31. Pleiades Publishing Ltd

	Karpovich, I. A., Tikhov, S. V., Shobolov, E. L., Zvonkov, B. N. (2002) A hydrogen-sensitive structure based on semi-insulating gallium arsenide. Technical Physics Letters, 28. 320-322 doi:10.1134/1.1477004
	*Rodionov, M. A. (2005) Silicon Passivated by Insulating Erbium Oxide Films. Technical Physics Letters, 31. 115pp. doi:10.1134/1.1877619*
	Klyui, N. I., Liptuga, A. I., Lozinskii, V. B., Oksanich, A. P., Terban, V. A., Fomovskii, F. V. (2012) Increasing the degradation resistance of semi-insulating gallium arsenide crystals by plasma processing. Technical Physics Letters, 38. 1016-1019 doi:10.1134/s1063785012110235
	Bibilashvili, A. P., Gerasimov, A. B., Kazarov, R. É., Samadashvili, Z. D. (1999) Catalytic plasma anodization of single-crystal 6H-SiC structures. Technical Physics Letters, 25. 593-594 doi:10.1134/1.1262566
	Bezryadin, N. N., Kotov, G. I., Kuzubov, S. V., Arsent’ev, I. N., Tarasov, I. S., Starodubtsev, A. A., Sysoev, A. B. (2008) Passivating gallium arsenide surface by gallium chalcogenide. Technical Physics Letters, 34. 428-430 doi:10.1134/s1063785008050209
	Gerasimov, A. B., Chiradze, G. D., Kutivadze, N. G., Bibilashvili, A. P., Bokhochadze, Z. G. (1999) Determining the microhardness throughout the depth in a sample. Physics of the Solid State, 41. 1115-1117 doi:10.1134/1.1130949
	*Kalintsev, A. G., Mikheeva, O. P., Sidorov, A. I. (2001) Laser radiation confinement at 1.06 μm in compensated gallium arsenide. Technical Physics Letters, 27. 1067-1068 doi:10.1134/1.1432373*
	Laletin, V. M., Stognii, A. I., Novitskii, N. N., Poddubnaya, N. N. (2014) The magnetoelectric effect in structures based on metallized gallium arsenide substrates. Technical Physics Letters, 40. 969-971 doi:10.1134/s1063785014110078
	Gerasimov, A. B., Chiradze, G. D., Kutivadze, N. G., Bibilashvili, A. P., Bokhochadze, Z. G. (2000) On the mechanism of residual photomechanical effect. Physics of the Solid State, 42. 701-702 doi:10.1134/1.1131274
	Roman, O. V., Dybov, O. A., Romanov, G. S., Usherenko, S. M. (2005) Damage of integrated circuits by high-velocity microparticles penetrating thick-wall obstacles. Technical Physics Letters, 31. 46-47 doi:10.1134/1.1859497
	*Bondarenko, V. P. (2005) Propagation Losses in Curved Integrated Optical Waveguides Based on Oxidized Porous Silicon. Technical Physics Letters, 31. 225pp. doi:10.1134/1.1894439*

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Lezhava, N. G., Bibilashvili, A. P., Gerasimov, A. B. (2005) Using intrinsic gallium arsenide oxide for insulating active elements in GaAs-based integrated circuits. Technical Physics Letters, 31. 75-76 doi:10.1134/1.1859506

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