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Matsuda, A. (1983) Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma. Journal of Non-Crystalline Solids, 59. 767-774 doi:10.1016/0022-3093(83)90284-3

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Reference TypeJournal (article/letter/editorial)
TitleFormation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma
JournalJournal of Non-Crystalline Solids
AuthorsMatsuda, A.Author
Year1983 (December)Volume59
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(83)90284-3Search in ResearchGate
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Mindat Ref. ID620482Long-form Identifiermindat:1:5:620482:6
GUID0
Full ReferenceMatsuda, A. (1983) Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma. Journal of Non-Crystalline Solids, 59. 767-774 doi:10.1016/0022-3093(83)90284-3
Plain TextMatsuda, A. (1983) Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma. Journal of Non-Crystalline Solids, 59. 767-774 doi:10.1016/0022-3093(83)90284-3
In(1983) Journal of Non-Crystalline Solids Vol. 59. Elsevier BV

See Also

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Bhat, P.K., Austin, I.G., Searle, T.M. (1983) Luminescence lifetime distributions in μc-Si and glow discharge and sputtered a-Si:H. Journal of Non-Crystalline Solids, 59. 381-384 doi:10.1016/0022-3093(83)90600-2
Hayashi, Shigenobu, Yamasaki, Satoshi, Matsuda, Akihisa, Tanaka, Kazunobu (1983) NMR study of μc-Si:H. Journal of Non-Crystalline Solids, 59. 779-782 doi:10.1016/0022-3093(83)90286-7
Hata, Nobuhiro, Matsuda, Akihisa, Tanaka, Kazunobu (1983) Neutral radical detection in silane glow-discharge plasma using coherent anti-stokes raman spectroscopy. Journal of Non-Crystalline Solids, 59. 667-670 doi:10.1016/0022-3093(83)90259-4
Kumeda, M., Yonezawa, Y., Morimoto, A., Ueda, S., Shimizu, T. (1983) H NMR in μc-Si:H. Journal of Non-Crystalline Solids, 59. 775-778 doi:10.1016/0022-3093(83)90285-5
Miyazaki, Seiichi, Mishima, Yasuyoshi, Hirose, Masataka, Osaka, Yukio (1983) Morphological fluctuations in discharge-produced μc-Si:H studied by small angle X-ray scattering. Journal of Non-Crystalline Solids, 59. 787-790 doi:10.1016/0022-3093(83)90288-0
Hamasaki, Toshihiko, Ueda, Masato, Osaka, Yukio, Hirose, Masataka (1983) Preferential segregation of dopants in μc-Si:H. Journal of Non-Crystalline Solids, 59. 811-814 doi:10.1016/0022-3093(83)90294-6
Matsuda, Akihisa, Kaga, Takao, Tanaka, Hideo, Tanaka, Kazunobu (1983) Lifetime of dominant radicals for the deposition of a-Si:H from SiH4 and Si2H6 glow discharges. Journal of Non-Crystalline Solids, 59. 687-690 doi:10.1016/0022-3093(83)90264-8
Tsuji, K., Minomura, S., Hiraga, T., Sekiguchi, A., Nagasaka, M. (1983) Deposition and properties of a-Si:H by cylindrical diode glow discharge. Journal of Non-Crystalline Solids, 59. 691-694 doi:10.1016/0022-3093(83)90265-x
Moller, G., Winterling, G., Kalbitzer, S., Reinelt, M. (1983) Hydrogen incorporation, doping and thickness dependent conductivity in glow discharge deposited a-Si:H films. Journal of Non-Crystalline Solids, 59. 469-472 doi:10.1016/0022-3093(83)90622-1
Bruno, Giovanni, Capezzuto, Pio, Cramarossa, Francesco, Barbarossa, Vincenzo, Augelli, Vincenzo, Murri, Roberto (1983) Doping of microcrystalline Si:H,Cl films in R.F. glow discharge. Journal of Non-Crystalline Solids, 59. 815-818 doi:10.1016/0022-3093(83)90295-8
Watanabe, Ichiro, Inoue, Makoto, Atoji, Tadashi (1983) Photoluminescence in glow discharge a-C:H films. Journal of Non-Crystalline Solids, 59. 377-380 doi:10.1016/0022-3093(83)90599-9
 
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