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Shuaibov, A. K. (2000) Pulsed microwave radiator for the band system λ=175 nm ArCl(B-X)/236 nm XeCl(D−X)/258 nm Cl2*/308 nm XeCl(B-X). Technical Physics Letters, 26. 357-359 doi:10.1134/1.1262868

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Reference TypeJournal (article/letter/editorial)
TitlePulsed microwave radiator for the band system λ=175 nm ArCl(B-X)/236 nm XeCl(D−X)/258 nm Cl2*/308 nm XeCl(B-X)
JournalTechnical Physics Letters
AuthorsShuaibov, A. K.Author
Year2000 (May)Volume26
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1262868Search in ResearchGate
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Mindat Ref. ID6203974Long-form Identifiermindat:1:5:6203974:9
GUID0
Full ReferenceShuaibov, A. K. (2000) Pulsed microwave radiator for the band system λ=175 nm ArCl(B-X)/236 nm XeCl(D−X)/258 nm Cl2*/308 nm XeCl(B-X). Technical Physics Letters, 26. 357-359 doi:10.1134/1.1262868
Plain TextShuaibov, A. K. (2000) Pulsed microwave radiator for the band system λ=175 nm ArCl(B-X)/236 nm XeCl(D−X)/258 nm Cl2*/308 nm XeCl(B-X). Technical Physics Letters, 26. 357-359 doi:10.1134/1.1262868
In(n.d.) Technical Physics Letters Vol. 26. Pleiades Publishing Ltd

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Shuaibov, A. K., Shimon, L. L., Dashchenko, A. I., Shevera, I. V. (2001) An electric discharge emitter operating simultaneously in the 308 [XeCl(B-X)], 258 [Cl2(D′-A′)], 236 [XeCl(D-X)], 222 [KrCl(B-X)], 175 [ArCl(B-X)], and 160 [H2(B-X)] nm bands. Technical Physics, 46 (2). 207-211 doi:10.1134/1.1349278
Shuaibov, A. K. (2000) Investigation of the plasma of a 308-nm XeCl excimer light emitter based on an inert-gas-CCl4 mixture. Technical Physics, 45 (6). 797-800 doi:10.1134/1.1259725
Shuaibov, A. K., Dashchenko, A. I., Semenyuk, Ya. N. (2000) Multiwave electric-discharge radiator for the 175–258-nm region. Journal of Applied Spectroscopy, 67. 569-571 doi:10.1007/bf02683876
Fontaine, B., Forestier, B. (1980) High specific power long‐pulse supersonic flow XeCl laser at 308 nm. Applied Physics Letters, 36 (3). 185-187 doi:10.1063/1.91440
Shuaibov, A. K., Minya, A. I., Gritsak, R. V., Gomoki, Z. T. (2014) Short-wavelength nanosecond-barrier-discharge-pumped emitter operating on lines of argon chloride (175 nm) and chlorine (258 nm) molecules. Technical Physics, 59 (1). 152-154 doi:10.1134/s1063784214010186
Shuker, R. (1976) Excimer emission band at 235.5 nm in the XeCl molecule. Applied Physics Letters, 29 (12). 785-787 doi:10.1063/1.88948
Obolenskii, S. V., Kitaev, M. A. (2000) A 30-nm-gate field-effect transistor. Technical Physics Letters, 26. 408-409 doi:10.1134/1.1262860
Durkan, C., Shvets, I.V. (1995) 40 nm resolution in reflection-mode SNOM with λ = 685 nm. Ultramicroscopy, 61 (1). 227-231 doi:10.1016/0304-3991(95)00114-x
Shuaibov, A. K. (1998) Multiwave excimer lamps using XeF/XeCl/KrF/KrCl molecules. Technical Physics, 43 (12). 1459-1462 doi:10.1134/1.1259225
Kamanina, N. V., Iskandarov, M. O., Nikitichev, A. A. (2003) Optical properties of a polyimide-fullerene system in the near infrared range (λ=1047 nm). Technical Physics Letters, 29. 672-675 doi:10.1134/1.1606785
Boikov, Yu. A., Danilov, V. A. (2005) Electric resistance and magnetoresistance of a two-layer epitaxial heterostructure (30 nm)La0.67Ca0.33MnO3/(30 nm)La0.67Ba0.33MnO3. Technical Physics Letters, 31. 1032-1035 doi:10.1134/1.2150890
 
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