登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Kazanskii, A. G., Kozlov, S. N., Mell, H., Forsh, P. A. (2000) The effect of illumination on the electric and photoelectric properties of μc-Si: H films weakly doped with boron. Technical Physics Letters, 26. 410-411 doi:10.1134/1.1262861

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleThe effect of illumination on the electric and photoelectric properties of μc-Si: H films weakly doped with boron
JournalTechnical Physics Letters
AuthorsKazanskii, A. G.Author
Kozlov, S. N.Author
Mell, H.Author
Forsh, P. A.Author
Year2000 (May)Volume26
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1262861Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6203967Long-form Identifiermindat:1:5:6203967:9
GUID0
Full ReferenceKazanskii, A. G., Kozlov, S. N., Mell, H., Forsh, P. A. (2000) The effect of illumination on the electric and photoelectric properties of μc-Si: H films weakly doped with boron. Technical Physics Letters, 26. 410-411 doi:10.1134/1.1262861
Plain TextKazanskii, A. G., Kozlov, S. N., Mell, H., Forsh, P. A. (2000) The effect of illumination on the electric and photoelectric properties of μc-Si: H films weakly doped with boron. Technical Physics Letters, 26. 410-411 doi:10.1134/1.1262861
In(n.d.) Technical Physics Letters Vol. 26. Pleiades Publishing Ltd

See Also

These are possibly similar items as determined by title/reference text matching only.

Emelyanov, A. V., Kazanskii, A. G., Kashkarov, P. K., Konkov, O. I., Kutuzov, N. P., Lyaskovskii, V. L., Forsh, P. A., Khenkin, M. V. (2014) Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization. Technical Physics Letters, 40. 141-144 doi:10.1134/s1063785014020217
Kazanskii, A. G., Fuhs, W., Mell, H. (1990) On the Fermi-Level Position in a–Si: H(P). physica status solidi (b), 160 (1). doi:10.1002/pssb.2221600143
Okunev, V. D., Pafomov, N. N., Abaleshev, A., Belska-Lewandowska, H., Gierlowski, P., Klimov, A., Lewandowski, S. (2000) The low-temperature electric conductivity of YBaCuO and LaSrMnO dielectric films obtained by a pulsed laser sputter deposition technique. Technical Physics Letters, 26. 903-906 doi:10.1134/1.1321234
Vlasov, S. I., Nazyrov, D. É., Iminov, A. A., Khudaiberdiev, S. S. (2000) Effect of heat treatment on the properties of erbium-doped silicon. Technical Physics Letters, 26. 328-329 doi:10.1134/1.1262833
Bogdanov, D. A., Bobyl’, A. V., Terukov, E. I., Verbitskii, V. N. (2015) A study of the influence exerted by the spectral sensitivity of photoelectric units based on c-Si and α-Si/μc-Si and by operating conditions on their working efficiency. Technical Physics Letters, 41. 113-116 doi:10.1134/s1063785015020042
Aleksandrov, V. A. (2009) Photoelectric skin effect in conducting films. Technical Physics, 54 (3). 410-414 doi:10.1134/s106378420903013x
Katerinchuk, V. N., Kovalyuk, Z. D., Netyaga, V. V., Betsa, T. V. (2000) Photoelectric properties of the n-SnSSe-p-InSe heterojunctions. Technical Physics Letters, 26. 754-756 doi:10.1134/1.1315484
Pavlikov, Alexander V., Forsh, Pavel A., Svyakhovskiy, Sergey E., Matsukatova, Anna N., Forsh, Ekaterina A., Kazanskii, Andrey G., Kashkarov, Pavel K. (2018) Giant enhancement of free charge carrier concentration in boron-doped amorphous hydrogenated silicon under femtosecond laser crystallization. Applied Physics Letters, 113 (20). 203103pp. doi:10.1063/1.5050202
Zhigunov, D. M., Il’in, A. S., Forsh, P. A., Bobyl’, A. V., Verbitskii, V. N., Terukov, E. I., Kashkarov, P. K. (2017) Luminescence of solar cells with a-Si:H/c-Si heterojunctions. Technical Physics Letters, 43. 496-498 doi:10.1134/s1063785017050261
Khenkin, Mark, Emelyanov, Andrey, Kazanskii, Andrey, Forsh, Pavel, Beresna, Martynas, Gecevicius, Mindaugas, Kazansky, Peter (2014) Effect of hydrogen concentration on structure and photoelectric properties of a-Si:H films modified by femtosecond laser pulses. Canadian Journal of Physics, 92. 883-887 doi:10.1139/cjp-2013-0582
Ilyin, A. S., Fantina, N. P., Martyshov, M. N., Forsh, P. A., Vorontsov, A. S., Rumyantseva, M. N., Gas’kov, A. M., Kashkarov, P. K. (2015) Voltage effect on the sensitivity of nanocrystalline indium oxide to nitrogen dioxide under ultraviolet irradiation. Technical Physics Letters, 41. 252-254 doi:10.1134/s1063785015030074
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.7 03:18:23
Go to top of page