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Galitsyn, Yu. G., Moshchenko, S. P., Toropov, A. I., Bakarov, A. K. (2000) Oscillation of the mirror and fractional RHEED reflections during homoepitaxy on the (2×4)-reconstructed GaAs(001) surface. Technical Physics Letters, 26. 307-310 doi:10.1134/1.1262826

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Reference TypeJournal (article/letter/editorial)
TitleOscillation of the mirror and fractional RHEED reflections during homoepitaxy on the (2×4)-reconstructed GaAs(001) surface
JournalTechnical Physics Letters
AuthorsGalitsyn, Yu. G.Author
Moshchenko, S. P.Author
Toropov, A. I.Author
Bakarov, A. K.Author
Year2000 (April)Volume26
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1262826Search in ResearchGate
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Mindat Ref. ID6203932Long-form Identifiermindat:1:5:6203932:3
GUID0
Full ReferenceGalitsyn, Yu. G., Moshchenko, S. P., Toropov, A. I., Bakarov, A. K. (2000) Oscillation of the mirror and fractional RHEED reflections during homoepitaxy on the (2×4)-reconstructed GaAs(001) surface. Technical Physics Letters, 26. 307-310 doi:10.1134/1.1262826
Plain TextGalitsyn, Yu. G., Moshchenko, S. P., Toropov, A. I., Bakarov, A. K. (2000) Oscillation of the mirror and fractional RHEED reflections during homoepitaxy on the (2×4)-reconstructed GaAs(001) surface. Technical Physics Letters, 26. 307-310 doi:10.1134/1.1262826
In(n.d.) Technical Physics Letters Vol. 26. Pleiades Publishing Ltd

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Galitsyn, Yu. G., Marakhovka, I. I., Moshchenko, S. P., Mansurov, V. G. (1998) As4 incorporation kinetics in GaAs (001) molecular-beam epitaxy. Technical Physics Letters, 24. 260-262 doi:10.1134/1.1262204
Bakarov, A., Galitsyn, Yu., Mansurov, V., Zhuravlev, K. (2017) Reconstruction phase transition c(4×4) – (1×3) on the (001)InSb surface. Journal of Crystal Growth, 457. 207-210 doi:10.1016/j.jcrysgro.2016.04.051
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Ivanov, A. Yu., Skvortsov, G. E. (2000) The laser-induced surface evaporation. Technical Physics Letters, 26. 675-677 doi:10.1134/1.1307810
 
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