Golikova, E. G., Gorbylev, V. A., Davidyuk, N. Yu., Kureshov, V. A., Leshko, A. Yu., Lyutetskii, A. V., Pikhtin, N. A., Ryaboshtan, Yu. A., Simakov, V. A., Tarasov, I. S., Fetisova, N. V. (2000) Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds. Technical Physics Letters, 26. 225-227 doi:10.1134/1.1262799

See Also

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	Golikova, E. G., Gorbylev, V. A., Il’in, Yu. V., Kureshov, V. A., Leshko, A. Yu., Lyutetskii, A. V., Pikhtin, N. A., Ryaboshtan, Yu. A., Simakov, V. A., Tarasov, I. S., Tret’yakova, E. A., Fetisova, N. V. (2000) Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds. Technical Physics Letters, 26. 295-297 doi:10.1134/1.1262822
	Golikova, E. G., Kureshov, V. A., Leshko, A. Yu., Lyutetskii, A. V., Pikhtin, N. A., Ryaboshtan, Yu. A., Slipchenko, S. O., Sokolova, Z. N., Fetisova, N. V., Bondarev, A. D., Tarasov, I. S. (2002) High-power 1.8-μm InGaAsP/InP lasers. Technical Physics Letters, 28. 113-115 doi:10.1134/1.1458507
	Golikova, E. G., Kureshov, V. A., Leshko, A. Yu., Livshits, D. A., Lyutetskii, A. V., Nikolaev, D. N., Pikhtin, N. A., Ryaboshtan, Yu. A., Slipchenko, S. O., Tarasov, I. S., Fetisova, N. V. (2000) The properties of InGaAsP/InP heterolasers with step-divergent waveguides. Technical Physics Letters, 26. 913-915 doi:10.1134/1.1321237
	Lyutetskii, A. V., Pikhtin, N. A., Slipchenko, S. O., Fetisova, N. V., Leshko, A. Yu., Golikova, E. G., Ryaboshtan, Yu. A., Tarasov, I. S. (2003) High-power 1.7–1.8 μm single-mode laser diodes. Technical Physics Letters, 29. 290-293 doi:10.1134/1.1573294
	Slipchenko, S. O., Lyutetskii, A. V., Pikhtin, N. A., Fetisova, N. V., Leshko, A. Yu., Ryaboshtan, Yu. A., Golikova, E. G., Tarasov, I. S. (2003) Low-threshold-current 1.2–1.5 μm laser diodes based on AlInGaAs/InP heterostructures. Technical Physics Letters, 29. 115-118 doi:10.1134/1.1558742
	Pikhtin, N. A., Il’in, Yu. V., Leshko, A. Yu., Lyutetskii, A. V., Stankevich, A. L., Tarasov, I. S., Fetisova, N. V. (1999) High-power broad-band single-mode InGaAsP/InP superluminescent diode. Technical Physics Letters, 25. 598-600 doi:10.1134/1.1262568
	Leshko, A. Yu., Lyutetskii, A. V., Murashova, A. V., Pikhtin, N. A., Tarasov, I. S., Arsent’ev, I. N., Ber, B. Ya., Kudryavtsev, Yu. A., Il’in, Yu. V., Fetisova, N. V. (1998) Multiwell laser heterostructures fabricated by liquid-phase epitaxy. Technical Physics Letters, 24. 854-856 doi:10.1134/1.1262291
	Pikhtin, N. A., Leshko, A. Yu., Lyutetskii, A. V., Khalfin, V. B., Shuvalova, N. V., Il’in, Yu. V., Tarasov, I. S. (1997) Two-section InGaAsP/InP Fabry-Perot laser with a 12 nm tuning range. Technical Physics Letters, 23. 214-216 doi:10.1134/1.1261602
	Murashova, A. V., Pikhtin, N. A., Fetisova, N. V., Lyutetskiĭ, A. V., Vavilova, L. S., Vasil’eva, V. V., Marmalyuk, A. A., Ryaboshtan, Yu. A., Tarasov, I. S. (2008) High-power single-mode laser diodes (λ = 1.1–1.2 μm) based on quantum-confined AlInGaAs/InP heterostructures. Technical Physics Letters, 34. 554-556 doi:10.1134/s1063785008070055
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	Babichev, A. V., Gladyshev, A. G., Dudelev, V. V., Karachinsky, L. Ya., Novikov, I. I., Denisov, D. V., Slipchenko, S. O., Lyutetskii, A. V., Pikhtin, N. A., Sokolovskii, G. S., Egorov, A. Yu. (2020) Heterostructures of Quantum-Cascade Laser for the Spectral Range of 4.6 μm for Obtaining a Continuous-Wave Lasing Mode. Technical Physics Letters, 46 (5) 442-445 doi:10.1134/s1063785020050028