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Slobodchikov, S. V., Salikhov, Kh. M. (1999) n(p)-InP-n-In2O3-P2O5-Pd diode structures as potential sensors for near-infrared radiation, moisture, and hydrogen. Technical Physics Letters, 25. 1001-1003 doi:10.1134/1.1262708

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Reference TypeJournal (article/letter/editorial)
Titlen(p)-InP-n-In2O3-P2O5-Pd diode structures as potential sensors for near-infrared radiation, moisture, and hydrogen
JournalTechnical Physics Letters
AuthorsSlobodchikov, S. V.Author
Salikhov, Kh. M.Author
Year1999 (December)Volume25
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1262708Search in ResearchGate
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Mindat Ref. ID6203478Long-form Identifiermindat:1:5:6203478:0
GUID0
Full ReferenceSlobodchikov, S. V., Salikhov, Kh. M. (1999) n(p)-InP-n-In2O3-P2O5-Pd diode structures as potential sensors for near-infrared radiation, moisture, and hydrogen. Technical Physics Letters, 25. 1001-1003 doi:10.1134/1.1262708
Plain TextSlobodchikov, S. V., Salikhov, Kh. M. (1999) n(p)-InP-n-In2O3-P2O5-Pd diode structures as potential sensors for near-infrared radiation, moisture, and hydrogen. Technical Physics Letters, 25. 1001-1003 doi:10.1134/1.1262708
In(n.d.) Technical Physics Letters Vol. 25. Pleiades Publishing Ltd

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Slobodchikov, S. V., Salikhov, Kh. M., Russu, E. V., Malinin, Yu. G. (2000) On the mechanism of charge transfer in n +-CdS-p-InP-p +-InP heterostructures. Technical Physics Letters, 26. 628-630 doi:10.1134/1.1262935
Slobodchikov, S. V., Salikhov, Kh. M., Yakovlev, Yu. P., Samorukov, B. E. (1998) Mechanisms of photocurrent amplification in isotypic n +-GaSb-n 0-GaInAsSb-n +-GaAlAsSb heterostructures. Technical Physics Letters, 24. 386-387 doi:10.1134/1.1262100
Potapovich, N. S., Timoshina, N. Kh., Khvostikov, V. P. (2018) Photovoltaic Laser-Power Converters Based on LPE-Grown InP(GaAs)/InP Heterostructures. Technical Physics Letters, 44. 820-822 doi:10.1134/s1063785018090274
Pikhtin, N. A., Il’in, Yu. V., Leshko, A. Yu., Lyutetskii, A. V., Stankevich, A. L., Tarasov, I. S., Fetisova, N. V. (1999) High-power broad-band single-mode InGaAsP/InP superluminescent diode. Technical Physics Letters, 25. 598-600 doi:10.1134/1.1262568
Andrushko, A. I., Salikhov, Kh. M., Slobodchikov, S. V. (1991) Recombination of nonequilibrium current carriers in n-InAs1?x?ySbxPy. Soviet Physics Journal, 34. 322-324 doi:10.1007/bf00898095
Grebenshchikova, E. A., Shutaev, V. A., Matveev, V. A., Gubanova, N. N., Shilova, O. A., Yakovlev, Yu. P. (2023) Hydrogen Influence on Electrical and Photoelectrical Properties of InP/Pd Thin-Film Structures Obtained by Sol-Gel Method. Technical Physics Letters, 49. doi:10.1134/s1063785023010157
Kamanina, N. V., Kaporskii, L. N. (1999) Optical limiting of laser radiation in dispersed liquid-crystal structures with fullerenes. Technical Physics Letters, 25. 257-259 doi:10.1134/1.1262445
Katerinchuk, V. N., Kovalyuk, M. Z. (1997) Photopleochroism of oxide-p-InSe diode structures. Technical Physics Letters, 23. 377 doi:10.1134/1.1261674
Styrov, V. V., Simchenko, S. V. (2013) SiC-based nanosized structures with p-n junctions for transforming chemical energy into electricity and sensors. Technical Physics Letters, 39. 621-625 doi:10.1134/s1063785013070122
Kurnaev, V. A., Trifonov, N. N., Drozdov, M. N., Salashchenko, N. N. (1999) Possibility of nondestructive layer-by-layer analysis of multilayer structures of ultrathin films using low-energy hydrogen ions. Technical Physics Letters, 25. 442-443 doi:10.1134/1.1262510
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