Bhattachar-yya, D., Vinokurov, D. A., Gusinskii, G. M., Elyukhin, V. A., Kovalenkov, O. V., Kyutt, R. N., Marsh, J. H., Naidenov, V. O., Portnoi, E. L. (1998) Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions. Technical Physics Letters, 24. 690-691 doi:10.1134/1.1262246

See Also

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	Busov, V. M., Venus, G. B., Gusinskii, G. M., Il’inskaya, N. D., Naidenov, V. O., Pasternak, A. A., Portnoi, E. L., Troshkov, S. I. (2000) Visualization of the ion projected range region in GaAs irradiated with argon ions. Technical Physics Letters, 26. 75-76 doi:10.1134/1.1262746
	Dzhioev, R. I., Zakharchenya, B. P., Korenev, V. L., Pak, P. E., Vinokurov, D. A., Kovalenkov, O. V., Tarasov, I. S. (1998) Optical orientation of donor-bound excitons in nanosized InP/InGaP islands. Physics of the Solid State, 40. 1587-1593 doi:10.1134/1.1130606
	Gusinskii, G. M., Baranova, L. A., Naidenov, V. O. (2015) Submicron source of free electrons. Technical Physics, 60 (3). 447-450 doi:10.1134/s106378421503007x
	Vinokurov, D. A., Kapitonov, V. A., Kovalenkov, O. V., Livshits, D. A., Tarasov, I. S. (1998) Self-organized nanosize InP and InAsP clusters obtained by metalorganic compound hydride epitaxy. Technical Physics Letters, 24. 623-625 doi:10.1134/1.1262221
	Bondarev, A. D., Vinokurov, D. A., Kapitonov, V. A., Kovalenkov, O. V., Sokolova, Z. N., Tarasov, I. S. (1998) Investigation of strained InxGa1−x As/InP quantum wells fabricated by metalorganic compound hydride epitaxy. Technical Physics Letters, 24. 886-887 doi:10.1134/1.1262303
	Gusinskii, G. M., Baryshev, S. V., Nashchekin, A. V., Sakseev, D. A., Naidenov, V. O., Konnikov, S. G. (2009) Track technology for creating the arrays of nickel microtips, micronozzles, and microtubes. Technical Physics Letters, 35. 678-679 doi:10.1134/s1063785009070268
	Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Voronova, N. A., Gusinskii, G. M., Naidenov, V. O. (2004) Strongly compensated InAs obtained by proton irradiation. Technical Physics Letters, 30. 15-18 doi:10.1134/1.1646703
	Gadzhiev, I. M., Buyalo, M. S., Bakshaev, I. O., Grigor’ev, R. I., Slipchenko, S. O., Pikhtin, N. A., Leshko, A. Yu., Lyutetskiĭ, A. V., Vinokurov, D. A., Tarasov, I. S., Portnoi, E. L. (2010) Features of mode locking in laser with quantum well in broad waveguide layer. Technical Physics Letters, 36. 1038-1041 doi:10.1134/s1063785010110192
	Sobolev, N. A., Kalyadin, A. E., Karabeshkin, K. V., Kyutt, R. N., Mikushkin, V. M., Shek, E. I., Sherstnev, E. V., Vdovin, V. I. (2018) Defect Structure of GaAs Layers Implanted with Nitrogen Ions. Technical Physics Letters, 44. 817-819 doi:10.1134/s1063785018090298
	Mynbaev, K. D., Bazhenov, N. L., Shilyaev, A. V., Dvoretskii, S. A., Mikhailov, N. N., Yakushev, M. V., Remesnik, V. G., Varavin, V. S. (2013) High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy. Technical Physics, 58 (10). 1536-1539 doi:10.1134/s1063784213100198
	Zhilyaev, Yu. V., Kompan, M. E., Konenkova, E. V., Mokeev, A. S., Raevskii, S. D. (1998) Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions. Technical Physics Letters, 24. 986-987 doi:10.1134/1.1262343