Gutakovskii, A. K., Katkov, A. V., Katkov, M. I., Pchelyakov, O. P., Revenko, M. A. (1998) Influence of the step height of the vicinal surface of germanium on the formation of antiphase boundaries in a gallium-arsenide-germanium-gallium-arsenide(001) system. Technical Physics Letters, 24. 949-951 doi:10.1134/1.1262328

See Also

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	Evstigneev, K. V., Korol’kov, V. I., Rozhkov, A. V. (1998) Investigation of the thermal stability of picosecond gallium arsenide dynistor switches. Technical Physics Letters, 24. 613-615 doi:10.1134/1.1262217
	Gutakovsky, A.K, Katkov, A.V, Katkov, M.I, Pchelyakov, O.P, Revenko, M.A (1999) Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(001). Journal of Crystal Growth, 201. 232-235 doi:10.1016/s0022-0248(98)01328-1
	Anisimov, V. V., Demkin, V. P., Kvint, I. A., Mel’nichuk, S. V., Semukhin, B. S. (2000) Hydrogen microdoping of the near-surface layers of gallium arsenide. Technical Physics Letters, 26. 284-287 doi:10.1134/1.1262819
	Antyushin, V. F., Budanov, A. V., Tatokhin, E. A., Boldyreva, Ya. A. (2002) The initial stage of the gallium selenide-gallium arsenide structure formation by heterovalent substitution of selenium for arsenic. Technical Physics Letters, 28. 295-297 doi:10.1134/1.1476995
	Laletin, V. M., Stognii, A. I., Novitskii, N. N., Poddubnaya, N. N. (2014) The magnetoelectric effect in structures based on metallized gallium arsenide substrates. Technical Physics Letters, 40. 969-971 doi:10.1134/s1063785014110078
	Bezryadin, N. N., Kotov, G. I., Kuzubov, S. V., Arsent’ev, I. N., Tarasov, I. S., Starodubtsev, A. A., Sysoev, A. B. (2008) Passivating gallium arsenide surface by gallium chalcogenide. Technical Physics Letters, 34. 428-430 doi:10.1134/s1063785008050209
	Bagrov, I. V., Zhevlakov, A. P., Sidorov, A. I. (2001) Nano-and microsecond laser pulse confinement in compensated gallium arsenide. Technical Physics Letters, 27. 406-407 doi:10.1134/1.1376766
	Kuznetsova, I. E., Zaitsev, B. D., Borodina, I. A., Popov, V. V. (1999) Influence of a thin conducting transverse layer on the properties of quasitransverse shear waves and Lamb waves in gallium arsenide plates. Technical Physics Letters, 25. 99-100 doi:10.1134/1.1262394
	Nomoev, S. A., Vasil’evskii, I. S., Vinichenko, A. N., Kozlovskii, K. I., Chistyakov, A. A., Mishina, E. D., Khusyainov, D. I., Buryakov, A. M. (2018) The Influence of the Annealing Regime on the Properties of Terahertz Antennas Based on Low-Temperature-Grown Gallium Arsenide. Technical Physics Letters, 44. 44-46 doi:10.1134/s1063785018010169
	Kalintsev, A. G., Mikheeva, O. P., Sidorov, A. I. (2001) Laser radiation confinement at 1.06 μm in compensated gallium arsenide. Technical Physics Letters, 27. 1067-1068 doi:10.1134/1.1432373
	�piktetova, L. E., Vasil'eva, L. P., Druzhinkin, I. F., Moskovkin, V. A., Lavrent'eva, L. G. (1973) Study of the diffusion of gallium and arsenic into germanium during the epitaxial growth of gallium arsenide on the latter. Soviet Physics Journal, 16. 72-76 doi:10.1007/bf00893345