Saidov, A. S., Koshchanov, É. A., Razzakov, A. Sh. (1998) The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x (ZnSe)x, Ge-(Ge2)1−x (ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x (ZnSe)x. Technical Physics Letters, 24. 47-48 doi:10.1134/1.1261988

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Reference Type	Journal (article/letter/editorial)
Title	The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x (ZnSe)x, Ge-(Ge2)1−x (ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x (ZnSe)x
Journal	Technical Physics Letters
Authors	Saidov, A. S.		Author
	Koshchanov, É. A.		Author
	Razzakov, A. Sh.		Author
Year	1998 (January)	Volume	24
Publisher	Pleiades Publishing Ltd
DOI	doi:10.1134/1.1261988Search in ResearchGate
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Mindat Ref. ID	6202993	Long-form Identifier	mindat:1:5:6202993:7
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Full Reference	Saidov, A. S., Koshchanov, É. A., Razzakov, A. Sh. (1998) The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x (ZnSe)x, Ge-(Ge2)1−x (ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x (ZnSe)x. Technical Physics Letters, 24. 47-48 doi:10.1134/1.1261988
Plain Text	Saidov, A. S., Koshchanov, É. A., Razzakov, A. Sh. (1998) The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x (ZnSe)x, Ge-(Ge2)1−x (ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x (ZnSe)x. Technical Physics Letters, 24. 47-48 doi:10.1134/1.1261988
In	(n.d.) Technical Physics Letters Vol. 24. Pleiades Publishing Ltd

	Saidov, A. S., Koshchanov, É. A., Razzakov, A. Sh., Ismailov, Sh. K. (1999) Growth of perfect-crystal Si-Si1−x Gex-(Ge2)1−x (InP)x structures from the liquid phase. Technical Physics Letters, 25. 986-987 doi:10.1134/1.1262702
	Saidov, A.S., Razzakov, A.Sh., Risaeva, V.A., Koschanov, E.A. (2001) Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x. Materials Chemistry and Physics, 68. 1-6 doi:10.1016/s0254-0584(00)00230-3
	Ismailov, Sh. K., Saidov, A. S., Durshimbetov, K., Zhollybekov, B. (2006) Optical properties of (Ge2)1−x (InP)x solid solutions. Technical Physics Letters, 32. 538-541 doi:10.1134/s1063785006060277
	Saidov, A. S., Usmonov, Sh. N., Kholikov, K. T., Saparov, D. (2007) Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions. Technical Physics Letters, 33. 701-703 doi:10.1134/s1063785007080238
	Saidov, A. S., Razzakov, A. Sh., Gaimnazarov, K. G. (2001) Liquid phase epitaxy of (GaAs)1−x (ZnSe)x solid solution layers from a lead-based solution melt. Technical Physics Letters, 27. 973-974 doi:10.1134/1.1424410
	Usmonov, Sh. N., Saidov, A. S., Leiderman, A. Yu. (2014) Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x. Physics of the Solid State, 56. 2401-2407 doi:10.1134/s1063783414120348
	Sapaev, B. (2004) Synthesis and properties of Ge-(Ge2)1−x (GaAs)x (0≤x≤1.0) epitaxial heterostructures grown by LPE from lead-based solution melts. Technical Physics Letters, 30. 657-659 doi:10.1134/1.1792304
	Saidov, A. S., Saparov, D. V., Usmonov, Sh. N., Razzakov, A. Sh., Kalanov, M. (2023) Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge₂)y(ZnSe)z and their photoelectric properties. International Journal of Modern Physics B, 37 (14) doi:10.1142/s0217979223501321
	*Saidov, A. S., Razzakov, A. Sh., Koshchanov, É. A. (2001) Liquid phase epitaxy of Ge1−x Snx semiconductor films. Technical Physics Letters, 27. 698-700 doi:10.1134/1.1398973*
	*Ito, Tomonori (1987) A Pseudopotential Approach to Mixing Enthalpies of Disordered (GaAs)1-x(Ge2)x. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1177*
	Salazar-Hernández, B., Vidal, M. A., Navarro-Contreras, H., Asomoza, R., Merkulov, A. (1998) Excitonic transitions in (GaAs)1−x(Ge2)x/GaAs multilayers grown by magnetron sputtering. Applied Physics Letters, 72 (1). 94-96 doi:10.1063/1.120655

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Saidov, A. S., Koshchanov, É. A., Razzakov, A. Sh. (1998) The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x (ZnSe)x, Ge-(Ge2)1−x (ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x (ZnSe)x. Technical Physics Letters, 24. 47-48 doi:10.1134/1.1261988

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