登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Bolkhovityanov, Yu. B., Gutakovskii, A. K., Deryabin, A. S., Sokolov, L. V. (2014) Specific features of plastic relaxation of a metastable Ge x Si1 − x layer buried between a silicon substrate and a relaxed germanium layer. Physics of the Solid State, 56. 247-253 doi:10.1134/s106378341402005x

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleSpecific features of plastic relaxation of a metastable Ge x Si1 − x layer buried between a silicon substrate and a relaxed germanium layer
JournalPhysics of the Solid State
AuthorsBolkhovityanov, Yu. B.Author
Gutakovskii, A. K.Author
Deryabin, A. S.Author
Sokolov, L. V.Author
Year2014 (February)Volume56
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s106378341402005xSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID6155745Long-form Identifiermindat:1:5:6155745:1
GUID0
Full ReferenceBolkhovityanov, Yu. B., Gutakovskii, A. K., Deryabin, A. S., Sokolov, L. V. (2014) Specific features of plastic relaxation of a metastable Ge x Si1 − x layer buried between a silicon substrate and a relaxed germanium layer. Physics of the Solid State, 56. 247-253 doi:10.1134/s106378341402005x
Plain TextBolkhovityanov, Yu. B., Gutakovskii, A. K., Deryabin, A. S., Sokolov, L. V. (2014) Specific features of plastic relaxation of a metastable Ge x Si1 − x layer buried between a silicon substrate and a relaxed germanium layer. Physics of the Solid State, 56. 247-253 doi:10.1134/s106378341402005x
In(n.d.) Physics of the Solid State Vol. 56. Pleiades Publishing Ltd

See Also

These are possibly similar items as determined by title/reference text matching only.

Bolkhovityanov, Yu. B., Gutakovskii, A. K., Deryabin, A. S., Sokolov, L. V. (2011) Edge misfit dislocations in Ge x Si1 − x /Si(001) (x ∼ 1) heterostructures: role of buffer Ge y Si1 − y (y < x) interlayer in their formation. Physics of the Solid State, 53. 1791-1797 doi:10.1134/s1063783411090083
Bolkhovityanov, Yu. B., Gutakovskii, A. K., Deryabin, A. S., Sokolov, L. V. (2008) Formation of misfit edge dislocations in Ge x Si1 − x films (x ∼ 0.4–0.5) grown on tilted Si(001) → (111) substrates. Physics of the Solid State, 50. 1857-1861 doi:10.1134/s1063783408100120
Bolkhovityanov, Yu. B., Gutakovskii, A. K., Deryabin, A. S., Sokolov, L. V. (2016) Experimental observation of motion of edge dislocations in Ge/Ge x Si1–x /Si(001) (x = 0.2–0.6) heterostructures. Journal of Experimental and Theoretical Physics, 123 (5). 832-837 doi:10.1134/s1063776116110042
Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V. (2004) Optimization of the plastic relaxation of misfit stresses in GexSi1−x /Si(001) (x≤0.61) heterostructures. Technical Physics Letters, 30. 68-70 doi:10.1134/1.1646719
Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Sokolov, L. V. (2010) Heteroepitaxy of Ge x Si1 − x (x ∼ 0.4–0.5) films on Si(001) substrates misoriented to (111): Formation of short edge misfit dislocations alone in the misorientation direction. Physics of the Solid State, 52. 32-36 doi:10.1134/s1063783410010063
Bolkhovityanov, Yu. B., Gutakovskii, A. K., Deryabin, A. S., Sokolov, L. V. (2019) Forming Dislocation Pairs in the Ge/GeSi/Si(001) Heterostructure. Physics of the Solid State, 61. 145-148 doi:10.1134/s1063783419020094
Bolkhovityanov, Yu. B., Gutakovskii, A. K., Deryabin, A. S., Sokolov, L. V. (2015) Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness. Physics of the Solid State, 57. 765-770 doi:10.1134/s1063783415040071
Bolkhovityanov, Yu. B., Vasilenko, A. P., Gutakovskii, A. K., Deryabin, A. S., Putyato, M. A., Sokolov, L. V. (2011) Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface. Physics of the Solid State, 53. 2005-2011 doi:10.1134/s106378341110009x
Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Sokolov, L. V. (2008) Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x∕Si (x∼0.4–0.5) films caused by Si substrate misorientation from (001). Applied Physics Letters, 92 (13). 131901pp. doi:10.1063/1.2905267
Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Sokolov, L. V. (2010) Formation of edge misfit dislocations in GexSi1−x(x∼0.4–0.8) films grown on misoriented (001)→(111) Si substrates: Features before and after film annealing. Journal of Applied Physics, 107 (12). 123521pp. doi:10.1063/1.3446296
Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V. (2004) Enhanced strain relaxation in a two-step process of GexSi1−x/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy. Applied Physics Letters, 84 (23). 4599-4601 doi:10.1063/1.1734683
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.8 05:12:20
Go to top of page