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Denisov, A. V., Krymov, V. M., Punin, Yu. O. (2007) Optical anomalies and residual stresses in basal-plane-faceted ribbons of Stepanov-grown sapphire crystals. Physics of the Solid State, 49. 472-477 doi:10.1134/s1063783407030146

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Reference TypeJournal (article/letter/editorial)
TitleOptical anomalies and residual stresses in basal-plane-faceted ribbons of Stepanov-grown sapphire crystals
JournalPhysics of the Solid State
AuthorsDenisov, A. V.Author
Krymov, V. M.Author
Punin, Yu. O.Author
Year2007 (March)Volume49
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063783407030146Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6152965Long-form Identifiermindat:1:5:6152965:2
GUID0
Full ReferenceDenisov, A. V., Krymov, V. M., Punin, Yu. O. (2007) Optical anomalies and residual stresses in basal-plane-faceted ribbons of Stepanov-grown sapphire crystals. Physics of the Solid State, 49. 472-477 doi:10.1134/s1063783407030146
Plain TextDenisov, A. V., Krymov, V. M., Punin, Yu. O. (2007) Optical anomalies and residual stresses in basal-plane-faceted ribbons of Stepanov-grown sapphire crystals. Physics of the Solid State, 49. 472-477 doi:10.1134/s1063783407030146
In(n.d.) Physics of the Solid State Vol. 49. Pleiades Publishing Ltd

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Krymov, V. M., Nosov, Yu. G., Bakholdin, S. I., Maslov, V. N., Shul’pina, I. L., Shcheglov, M. P. (2015) Block structure and residual stresses in tubular sapphire single crystals grown by the Stepanov method. Physics of the Solid State, 57. 2257-2263 doi:10.1134/s1063783415110207
Krymov, V. M., Nosov, Yu. G., Bakholdin, S. I., Galaktionov, E. V., Maslov, V. N., Tropp, E. A. (2015) Residual stresses in sapphire rods grown by the Stepanov method. Physics of the Solid State, 57. 746-751 doi:10.1134/s1063783415040150
Denisov, A.V., Molchanov, A., Punin, Yu.O., Krymov, V.M., Müller, G., Friedrich, J. (2012) Analysis of the growth conditions of long single crystalline basal-plane-faceted sapphire ribbons by the Stepanov/EFG technique. Journal of Crystal Growth, 344 (1). 38-44 doi:10.1016/j.jcrysgro.2012.02.005
Bakholdin, S. I., Krymov, V. M., Moskalev, A. V., Nosov, Yu. G., Shulpina, I. L., Yuferev, V. S., Antonov, P. I. (2008) Formation of the block structure during growth of basal-plane-faceted sapphire ribbons with different widths. Crystallography Reports, 53 (7) 1150-1156 doi:10.1134/s1063774508070109
Krymov, V. M., Nosov, Yu. G., Bakholdin, S. I., Maslov, V. N., Shul’pina, I. L. (2015) Blocks and residual stresses in sapphire rods of different crystallographic orientations grown by the Stepanov method. Crystallography Reports, 60 (3) 377-383 doi:10.1134/s1063774515020145
Mamedov, V. M., Yuferev, V. S., Bakholdin, S. I., Nosov, Yu. G. (2008) Investigation of the heat exchange processes during growth of basal-plane-faceted sapphire ribbons by the Stepanov method. Crystallography Reports, 53 (7) 1194-1202 doi:10.1134/s1063774508070183
Nosov, Yu. G., Bakholdin, S. I., Krymov, V. M. (2009) Faceting of sapphire crystals grown from a melt by the Stepanov method. Technical Physics, 54 (2). 239-245 doi:10.1134/s1063784209020133
Bakholdin, S. I., Krymov, V. M., Nosov, Yu. G. (2021) Calculation of Residual Stresses in Shaped Sapphire Single Crystals from Conoscopic Measurement Data. Technical Physics, 66 (4) 535-542 doi:10.1134/s1063784221040022
Andreev, A. E., Dolzhenkova, E. F., Konevskii, P. V., Litvinov, L. A., Lukienko, O. A. (2015) Growth and defect structure of basal-plane-faceted sapphire ribbons. Inorganic Materials, 51 (10) 1025-1032 doi:10.1134/s0020168515100015
Bakholdin, S. I., Galaktionov, E. V., Krymov, V. M. (2024) Effect of Anisotropy on Thermoelastic Stresses in Cylindrical Gallium Oxide Crystals Grown from a Melt. Technical Physics, 69 (5). doi:10.1134/s1063784224040029
Denisov, A. V., Punin, Yu. O., Gabrielyan, V. T., Grunskiĭ, O. S., Shtukenberg, A. G. (2006) Physical and physicochemical processes accompanying powder synthesis, growth of PbMoO4 crystals, and their annealing in various media: VI. Anomalous biaxiality and thermoplastic stresses in PbMoO4 crystals in the relationship with the growth conditions. Crystallography Reports, 51 (1) 128-134 doi:10.1134/s1063774506010226
 
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