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Gol’tsman, B. M., Yarmarkin, V. K., Lemanov, V. V. (2000) Influence of mobile charged defects on the dielectric non-linearity of thin ferroelectric PZT films. Physics of the Solid State, 42. 1116-1119 doi:10.1134/1.1131325

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of mobile charged defects on the dielectric non-linearity of thin ferroelectric PZT films
JournalPhysics of the Solid State
AuthorsGol’tsman, B. M.Author
Yarmarkin, V. K.Author
Lemanov, V. V.Author
Year2000 (June)Volume42
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1131325Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6150187Long-form Identifiermindat:1:5:6150187:8
GUID0
Full ReferenceGol’tsman, B. M., Yarmarkin, V. K., Lemanov, V. V. (2000) Influence of mobile charged defects on the dielectric non-linearity of thin ferroelectric PZT films. Physics of the Solid State, 42. 1116-1119 doi:10.1134/1.1131325
Plain TextGol’tsman, B. M., Yarmarkin, V. K., Lemanov, V. V. (2000) Influence of mobile charged defects on the dielectric non-linearity of thin ferroelectric PZT films. Physics of the Solid State, 42. 1116-1119 doi:10.1134/1.1131325
In(n.d.) Physics of the Solid State Vol. 42. Pleiades Publishing Ltd

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Yarmarkin, V. K., Gol’tsman, B. M., Kazanin, M. M., Lemanov, V. V. (2000) Barrier photovoltaic effects in PZT ferroelectric thin films. Physics of the Solid State, 42. 522-527 doi:10.1134/1.1131242
Yarmarkin, V. K., Teslenko, S. P. (1998) Dielectric relaxation in thin-film metal-PZT-ferroelectric-metal structures. Physics of the Solid State, 40. 1738-1741 doi:10.1134/1.1130647
Yarmarkin, V. K., Shul’man, S. G., Lemanov, V. V. (2008) Resistive switching in Au/TiO2/Pt thin film structures on silicon. Physics of the Solid State, 50. 1841-1847 doi:10.1134/s1063783408100090
Yarmarkin, V. K., Shul’man, S. G., Lemanov, V. V. (2013) On the effect of spontaneous polarization on the height of the Schottky barrier at the metal-ferroelectric contact. Physics of the Solid State, 55. 547-550 doi:10.1134/s1063783413030323
Davitadze, S. T., Kravchun, S. N., Strukov, B. A., Taraskin, S. A., Gol’tsman, B. M., Lemanov, V. V., Shul’man, S. G. (2000) Study of the thermal properties of Ba1−x SrxTiO3 thin films by the ac hot-probe method. Physics of the Solid State, 42. 1887-1890 doi:10.1134/1.1318882
Yarmarkin, V. K., Shul’man, S. G., Lemanov, V. V. (2009) Is there ferroelectricity in DNA?. Physics of the Solid State, 51. 1881-1885 doi:10.1134/s1063783409090194
Gol’tsman, B. M., Lemanov, V. V., Dedyk, A. I., Karmanenko, S. F., Ter-Martirosyan, L. T. (1997) Dielectric properties of planar structures based on ferroelectric Ba0.5Sr0.5TiO3 films. Technical Physics Letters, 23. 594-596 doi:10.1134/1.1261763
Balashova, E. V., Krichevtsov, B. B., Svinarev, F. B., Lemanov, V. V. (2013) Ferroelectric films of deuterated glycine phosphite: Structure and dielectric properties. Physics of the Solid State, 55. 995-1001 doi:10.1134/s106378341305003x
Yarmarkin, V. K., Shul’man, S. G., Lemanov, V. V. (2006) Phase transition in diserine sulfate monohydrate crystals. Physics of the Solid State, 48. 1568-1571 doi:10.1134/s1063783406080233
Yarmarkin, V. K., Shul’man, S. G., Pankova, G. A., Zaĭtseva, N. V., Lemanov, V. V. (2008) Dielectric relaxation in TGS crystals doped with orthophosphoric and phosphorous acids. Physics of the Solid State, 50. 937-940 doi:10.1134/s1063783408050211
Gol’tsman, B. M., Yarmarkin, V. K. (1999) Ferroelectric materials for dynamic-memory integrated circuits. Technical Physics, 44 (5). 558-561 doi:10.1134/1.1259382
 
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