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Babunts, R. A., Vetrov, V. A., Il’in, I. V., Mokhov, E. N., Romanov, N. G., Khramtsov, V. A., Baranov, P. G. (2000) Properties of erbium luminescence in bulk crystals of silicon carbide. Physics of the Solid State, 42. 829-835 doi:10.1134/1.1131297

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Reference TypeJournal (article/letter/editorial)
TitleProperties of erbium luminescence in bulk crystals of silicon carbide
JournalPhysics of the Solid State
AuthorsBabunts, R. A.Author
Vetrov, V. A.Author
Il’in, I. V.Author
Mokhov, E. N.Author
Romanov, N. G.Author
Khramtsov, V. A.Author
Baranov, P. G.Author
Year2000 (May)Volume42
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1131297Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6150159Long-form Identifiermindat:1:5:6150159:5
GUID0
Full ReferenceBabunts, R. A., Vetrov, V. A., Il’in, I. V., Mokhov, E. N., Romanov, N. G., Khramtsov, V. A., Baranov, P. G. (2000) Properties of erbium luminescence in bulk crystals of silicon carbide. Physics of the Solid State, 42. 829-835 doi:10.1134/1.1131297
Plain TextBabunts, R. A., Vetrov, V. A., Il’in, I. V., Mokhov, E. N., Romanov, N. G., Khramtsov, V. A., Baranov, P. G. (2000) Properties of erbium luminescence in bulk crystals of silicon carbide. Physics of the Solid State, 42. 829-835 doi:10.1134/1.1131297
In(n.d.) Physics of the Solid State Vol. 42. Pleiades Publishing Ltd

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Baranov, P. G., Ilyin, I. V., Mokhov, E. N., Pevtsov, A. B., Khramtsov, V. A. (1999) Erbium in silicon carbide crystals: EPR and high-temperature luminescence. Physics of the Solid State, 41. 32-34 doi:10.1134/1.1130723
Baranov, P. G., Il’in, I. V., Mokhov, E. N., Roenkov, A. D., Khramtsov, V. A. (1997) Electron paramagnetic resonance of scandium in silicon carbide. Physics of the Solid State, 39. 44-48 doi:10.1134/1.1130124
Baranov, P. G., Romanov, N. G., Khramtsov, V. A., Badalyan, A. G., Babunts, R. A. (2000) KCl crystals with a silver impurity: From point defects to oriented AgCl microcrystals in a crystalline host. Physics of the Solid State, 42. 2231-2235 doi:10.1134/1.1332144
Baranov, P. G., Il’in, I. V., Mokhov, E. N., Khramtsov, V. A. (1998) Electron paramagnetic resonance of defects with metastable properties in crystalline GaN. Physics of the Solid State, 40. 1648-1652 doi:10.1134/1.1130626
Baranov, P. G., Ionov, A. N., Il’in, I. V., Kop’ev, P. S., Mokhov, E. N., Khramtsov, V. A. (2003) Electron paramagnetic resonance in neutron-transmutation-doped semiconductors with a changed isotopic composition. Physics of the Solid State, 45. 1030-1041 doi:10.1134/1.1583785
Baranov, P. G., Il’in, I. V., Mokhov, E. N., Khramtsov, V. A. (1999) Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: Recent EPR studies. Physics of the Solid State, 41. 783-785 doi:10.1134/1.1130872
Babunts, R. A., Romanov, N. G., Tolmachev, D. O., Badalyan, A. G., Khramtsov, V. A., Baranov, P. G., Rauh, D., Dyakonov, V. (2009) Identification of recombination centers in wide-band-gap crystals and related nanostructures from spin-dependent tunneling afterglow. Physics of the Solid State, 51. 2437-2445 doi:10.1134/s1063783409120026
Anisimov, A. N., Tolmachev, D. O., Babunts, R. A., Muzafarova, M. V., Bundakova, A. P., Il’in, I. V., Soltamov, V. A., Baranov, P. G., Mokhov, E. N., Astakhov, G. V., Dyakonov, V. (2016) An optical quantum magnetometer with submicron resolution based on the level anticrossing phenomenon. Technical Physics Letters, 42. 618-621 doi:10.1134/s1063785016060171
Il’in, I. V., Uspenskaya, Yu. A., Kramushchenko, D. D., Muzafarova, M. V., Soltamov, V. A., Mokhov, E. N., Baranov, P. G. (2018) Group III Acceptors with Shallow and Deep Levels in Silicon Carbide: ESR and ENDOR Studies. Physics of the Solid State, 60. 644-662 doi:10.1134/s1063783418040121
Anisimov, A. N., Babunts, R. A., Muzafarova, M. V., Bundakova, A. P., Il’in, I. V., Soltamov, V. A., Romanov, N. G., Baranov, P. G. (2017) An optical quantum thermometer with submicrometer resolution based on the level anticrossing phenomenon. Technical Physics Letters, 43. 355-357 doi:10.1134/s1063785017040046
Baranov, P. G., Il’in, I. V., Mokhov, E. N. (1998) Electron paramagnetic resonance of deep boron acceptors in 4H-SiC and 3C-SiC crystals. Physics of the Solid State, 40. 31-34 doi:10.1134/1.1130226
 
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