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Orlov, L. K., Ivina, N. L., Romanov, Yu. A., Rubtsova, R. A. (2000) Investigation of barrier tunneling characteristics of symmetrical double quantum well in In0.25Ga0.75As/GaAs/In0.25Ga0.75As heterostructure. Physics of the Solid State, 42. 548-553 doi:10.1134/1.1131247

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of barrier tunneling characteristics of symmetrical double quantum well in In0.25Ga0.75As/GaAs/In0.25Ga0.75As heterostructure
JournalPhysics of the Solid State
AuthorsOrlov, L. K.Author
Ivina, N. L.Author
Romanov, Yu. A.Author
Rubtsova, R. A.Author
Year2000 (March)Volume42
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1131247Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6150109Long-form Identifiermindat:1:5:6150109:0
GUID0
Full ReferenceOrlov, L. K., Ivina, N. L., Romanov, Yu. A., Rubtsova, R. A. (2000) Investigation of barrier tunneling characteristics of symmetrical double quantum well in In0.25Ga0.75As/GaAs/In0.25Ga0.75As heterostructure. Physics of the Solid State, 42. 548-553 doi:10.1134/1.1131247
Plain TextOrlov, L. K., Ivina, N. L., Romanov, Yu. A., Rubtsova, R. A. (2000) Investigation of barrier tunneling characteristics of symmetrical double quantum well in In0.25Ga0.75As/GaAs/In0.25Ga0.75As heterostructure. Physics of the Solid State, 42. 548-553 doi:10.1134/1.1131247
In(n.d.) Physics of the Solid State Vol. 42. Pleiades Publishing Ltd

See Also

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Orlov, L. K., Ivina, N. L. (2004) Formation of a system of InGaAs quantum wires in a gallium arsenide matrix. Physics of the Solid State, 46. 942-947 doi:10.1134/1.1744974
Shieh, H. M., Hsu, W. C., Wu, C. L., Wu, T. S. (1993) High Performance Double Delta Doping GaAs/In0.25Ga0.75As/GaAs Pseudomorphic Heterostructure. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l303
Orlov, L. K., Ivina, N. L., Drozdov, Yu. N., Alyabina, N. A. (2002) Elastic stress relaxation in buffer layers based on porous strained InGaAs/GaAs superlattices. Technical Physics Letters, 28. 1018-1020 doi:10.1134/1.1535489
Orlov, L. K., Drozdov, Yu. N., Alyabina, N. A., Ivina, N. L., Vdovin, V. I., Dmitruk, I. N. (2009) Structure and ultraviolet photoluminescence of 3C-SiC films grown on Si(111). Physics of the Solid State, 51. 474-480 doi:10.1134/s1063783409030056
Orlov, L. K., Steinman, E. A., Smyslova, T. N., Ivina, N. L., Tereshchenko, A. N. (2012) Features and mechanisms of growth of cubic silicon carbide films on silicon. Physics of the Solid State, 54. 708-715 doi:10.1134/s1063783412040208
Useinov, N. Kh. (2013) Tunneling characteristics of a double-barrier magnetic junction. Physics of the Solid State, 55. 659-667 doi:10.1134/s1063783413030281
Orlov, L. K., Horvath, Z. J., Orlov, M. L., Lonchakov, A. T., Ivina, N. L., Dobos, L. (2008) Anomalous electrical properties of Si/Si1 − x Ge x heterostructures with an electron transport channel in Si layers. Physics of the Solid State, 50. 330-340 doi:10.1134/s1063783408020194
Reed, M. A., Lee, J. W., Tsai, H‐L. (1986) Resonant tunneling through a double GaAs/AlAs superlattice barrier, single quantum well heterostructure. Applied Physics Letters, 49 (3). 158-160 doi:10.1063/1.97210
Orlov, L. K., Shteinman, E. A., Ivina, N. L., Vdovin, V. I. (2011) Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum. Physics of the Solid State, 53. 1798-1805 doi:10.1134/s1063783411090228
Zou, J., Chou, C. T., Cockayne, D. J. H., Sikorski, A., Vaughan, M. R. (1994) Misfit dislocations lying along 〈100〉 in [001] GaAs/In0.25Ga0.75As/GaAs quantum well heterostructures. Applied Physics Letters, 65 (13). 1647-1649 doi:10.1063/1.112938
Ivina, N. L., Orlov, L. K. (2001) Effect of surface segregation on the sharpness of heteroboundaries in multilayered Si(Ge)/Si1−x Gex structures grown from atomic beams in vacuum. Physics of the Solid State, 43. 1182-1187 doi:10.1134/1.1378164
 
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