Kompan, M. E., Shabanov, I. Yu., Salonen, Ya. (1999) Orientation-dependent Faraday effect in thin films of porous silicon. Physics of the Solid State, 41. 45-47 doi:10.1134/1.1130727

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Reference Type	Journal (article/letter/editorial)
Title	Orientation-dependent Faraday effect in thin films of porous silicon
Journal	Physics of the Solid State
Authors	Kompan, M. E.		Author
	Shabanov, I. Yu.		Author
	Salonen, Ya.		Author
Year	1999 (January)	Volume	41
Publisher	Pleiades Publishing Ltd
DOI	doi:10.1134/1.1130727Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	6149504	Long-form Identifier	mindat:1:5:6149504:5
GUID	0
Full Reference	Kompan, M. E., Shabanov, I. Yu., Salonen, Ya. (1999) Orientation-dependent Faraday effect in thin films of porous silicon. Physics of the Solid State, 41. 45-47 doi:10.1134/1.1130727
Plain Text	Kompan, M. E., Shabanov, I. Yu., Salonen, Ya. (1999) Orientation-dependent Faraday effect in thin films of porous silicon. Physics of the Solid State, 41. 45-47 doi:10.1134/1.1130727
In	(n.d.) Physics of the Solid State Vol. 41. Pleiades Publishing Ltd

	Kompan, M. E., Shabanov, I. Yu. (1997) Investigation of fatigue relaxation of luminescence in porous silicon by time-resolved spectroscopy. Physics of the Solid State, 39. 1030-1034 doi:10.1134/1.1130024
	Kompan, M. E., Salonen, J., Shabanov, I. Yu. (2000) Anomalous birefringence of light in free-standing samples of porous silicon. Journal of Experimental and Theoretical Physics, 90 (2). 324-329 doi:10.1134/1.559107
	Kompan, M. E., Khartsiev, V. E., Shabanov, I. Yu., Parbukov, A. N. (1997) On the nature of the spectral shift caused by photoluminescence fatigue in porous silicon. Physics of the Solid State, 39. 1912-1915 doi:10.1134/1.1130198
	*Kompan, M. E., Novak, I. I., Kulik, V. B., Kamakova, N. A. (1999) Enhancement of Raman scattering intensity in porous silicon. Physics of the Solid State, 41. 1207-1209 doi:10.1134/1.1130968*
	Kompan, M. E., Shabanov, I. Yu., Zhilyaev, Yu. V. (2000) Polarization-dependent inhomogeneous broadening of the edge luminescence band of hexagonal gallium nitride. Physics of the Solid State, 42. 1041-1044 doi:10.1134/1.1131344
	*Kompan, M. E. (2003) Mechanism of primary self-organization in porous silicon with a regular structure. Physics of the Solid State, 45. 948-952 doi:10.1134/1.1575342*
	*Aksyanov, I. G., Kompan, M. E., Kul’kova, I. V. (2010) Raman scattering in mosaic silicon carbide films. Physics of the Solid State, 52. 1850-1854 doi:10.1134/s1063783410090106*
	*Kompan, M. E., Malyshkin, V. G. (2019) The Reverse Relaxation Effect and Structure of Porous Electrodes in Supercapacitors. Technical Physics Letters, 45. 45-47 doi:10.1134/s1063785019010279*
	Kompan, M. E., Klimov, V. A., Nikitin, S. E., Kompan, F. M., Goffman, V. G., Terukov, E. I. (2015) Low-frequency impedance in thin films near the metal-semiconductor phase transition. Physics of the Solid State, 57. 1908-1911 doi:10.1134/s1063783415090188
	*Chupis, I. E. (2003) Enhancement of the magnetoelectric effect in thin ferroelectric films. Physics of the Solid State, 45. 1284-1287 doi:10.1134/1.1594243*
	Klebanskii, E. O., Kudzin, A. Yu., Pasal’skii, V. M., Plyaka, S. N., Sadovskaya, L. Ya., Sokolyanskii, G. Kh. (1999) Thin sol-gel bismuth silicate films. Physics of the Solid State, 41. 913-915 doi:10.1134/1.1130903

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Kompan, M. E., Shabanov, I. Yu., Salonen, Ya. (1999) Orientation-dependent Faraday effect in thin films of porous silicon. Physics of the Solid State, 41. 45-47 doi:10.1134/1.1130727

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