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Sakai, N., Fritzsche, H. (1980) Effect of pressure on electron tunneling into amorphous germanium. Journal of Non-Crystalline Solids, 35. 617-622 doi:10.1016/0022-3093(80)90663-8

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Reference TypeJournal (article/letter/editorial)
TitleEffect of pressure on electron tunneling into amorphous germanium
JournalJournal of Non-Crystalline Solids
AuthorsSakai, N.Author
Fritzsche, H.Author
Year1980 (January)Volume35
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(80)90663-8Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID614201Long-form Identifiermindat:1:5:614201:2
GUID0
Full ReferenceSakai, N., Fritzsche, H. (1980) Effect of pressure on electron tunneling into amorphous germanium. Journal of Non-Crystalline Solids, 35. 617-622 doi:10.1016/0022-3093(80)90663-8
Plain TextSakai, N., Fritzsche, H. (1980) Effect of pressure on electron tunneling into amorphous germanium. Journal of Non-Crystalline Solids, 35. 617-622 doi:10.1016/0022-3093(80)90663-8
In(1980) Journal of Non-Crystalline Solids Vol. 35. Elsevier BV

See Also

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Long, A.R., Balkan, N. (1980) A.C. Loss in amorphous germanium. Journal of Non-Crystalline Solids, 35. 415-420 doi:10.1016/0022-3093(80)90630-4
Sauvage, J.A., Mogab, C.J. (1972) Electron tunneling into amorphous silicon. Journal of Non-Crystalline Solids, 8. 607-613 doi:10.1016/0022-3093(72)90199-8
Minomura, Shigeru, Tsuji, Kazuhiko, Oyanagi, Hiroyuki, Fujii, Yasuhiko (1980) Effect of hydrogen on the structure and pressure-induced transition of amorphous silicon-hydrogen alloys. Journal of Non-Crystalline Solids, 35. 513-518 doi:10.1016/0022-3093(80)90646-8
Martinez, Emilio, Yndurain, Felix (1980) Electronic structure of amorphous SixGe1−xO2. Journal of Non-Crystalline Solids, 35. 71 doi:10.1016/0022-3093(80)90574-8
Goodman, Nancy B, Fritzsche, H, Ozaki, H (1980) Determination of the density of states of a-Si:H using the field effect. Journal of Non-Crystalline Solids, 35. 599-604 doi:10.1016/0022-3093(80)90660-2
Viscor, P., Yoffe, A.D. (1980) Amorphous germanium prepared in ultra high vacuum and measured in situ: the D.C. electrical conductivity. Journal of Non-Crystalline Solids, 35. 409-414 doi:10.1016/0022-3093(80)90629-8
Adler, David (1980) Defects in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 819-824 doi:10.1016/0022-3093(80)90301-4
Cohen, Morrel H., Singh, J., Yonezawa, F. (1980) Ideal amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 55-60 doi:10.1016/0022-3093(80)90571-2
Takahashi, Takashi, Harada, Yoshiya (1980) Reversible and irreversible photostructural changes in amorphous germanium chalcogenides studied by UPS. Journal of Non-Crystalline Solids, 35. 1041-1046 doi:10.1016/0022-3093(80)90337-3
Takano, Y., Sato, T., Kitaoka, N., Ozaki, H. (1983) The effect of nitrogen doping on amorphous germanium. Journal of Non-Crystalline Solids, 55 (3) 325-333 doi:10.1016/0022-3093(83)90038-8
Nagels, P., Colson, R., Van Gool, L. (1980) Electronic transport in amorphous CdAs2. Journal of Non-Crystalline Solids, 35. 427 doi:10.1016/0022-3093(80)90632-8
 
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