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Biegelsen, D.K, Street, R.A, Tsai, C.C, Knights, J.C (1980) Defect creation and hydrogen evolution in amorphous Si:H. Journal of Non-Crystalline Solids, 35. 285-290 doi:10.1016/0022-3093(80)90608-0

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Reference TypeJournal (article/letter/editorial)
TitleDefect creation and hydrogen evolution in amorphous Si:H
JournalJournal of Non-Crystalline Solids
AuthorsBiegelsen, D.KAuthor
Street, R.AAuthor
Tsai, C.CAuthor
Knights, J.CAuthor
Year1980 (January)Volume35
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(80)90608-0Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID613863Long-form Identifiermindat:1:5:613863:3
GUID0
Full ReferenceBiegelsen, D.K, Street, R.A, Tsai, C.C, Knights, J.C (1980) Defect creation and hydrogen evolution in amorphous Si:H. Journal of Non-Crystalline Solids, 35. 285-290 doi:10.1016/0022-3093(80)90608-0
Plain TextBiegelsen, D.K, Street, R.A, Tsai, C.C, Knights, J.C (1980) Defect creation and hydrogen evolution in amorphous Si:H. Journal of Non-Crystalline Solids, 35. 285-290 doi:10.1016/0022-3093(80)90608-0
In(1980) Journal of Non-Crystalline Solids Vol. 35. Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Street, R.A., Biegelsen, D.K. (1980) Explanation of light induced ESR in a-Si:H; dangling bonds with a positive correlation energy. Journal of Non-Crystalline Solids, 35. 651-656 doi:10.1016/0022-3093(80)90278-1
Biegelsen, D.K., Street, R.A., Jackson, W.A., Weisfield, R.L. (1984) Deep recombination centers in a-Si:H. Journal of Non-Crystalline Solids, 66 (1) 139-144 doi:10.1016/0022-3093(84)90312-0
Knights, J.C. (1980) Growth morphology and defects in plasma-deposited a-Si:H films. Journal of Non-Crystalline Solids, 35. 159-170 doi:10.1016/0022-3093(80)90589-x
Street, R.A., Biegelsen, D.K., Knights, J.C. (1981) The luminescence of doped and compensated amorphous silicon. Journal of Luminescence, 24. 51-54 doi:10.1016/0022-2313(81)90218-0
Noolandi, J., Hong, K.M., Street, R.A. (1980) Theory of radiative recombination by diffusion and tunnelling in amorphous Si:H. Journal of Non-Crystalline Solids, 35. 669-674 doi:10.1016/0022-3093(80)90281-1
Street, R.A., Biegelsen, D.K. (1979) Defect states in Ge chalcogenides observed by photoluminescence and ESR. Journal of Non-Crystalline Solids, 32 (1) 339-358 doi:10.1016/0022-3093(79)90081-4
Knights, J.C., Street, R.A., Lucovsky, G. (1980) Electronic and structural properties of plasma-deposited a-Si:O:H - The story of O2. Journal of Non-Crystalline Solids, 35. 279-284 doi:10.1016/0022-3093(80)90607-9
Tsai, C.C., Knights, J.C., Thompson, M.J. (1984) ‘Clean’ a-Si:H prepared in a UHV system. Journal of Non-Crystalline Solids, 66 (1) 45-50 doi:10.1016/0022-3093(84)90296-5
Nemanich, R.J., Knights, J.C. (1980) Structure and defects in the amorphous Si:As:H system. Journal of Non-Crystalline Solids, 35. 243-248 doi:10.1016/0022-3093(80)90601-8
Tsai, C.C., Knights, J.C., Lujan, R.A., Wacker, B., Stafford, B.L., Thompson, M.J. (1983) Amorphous Si prepared in a UHV plasma deposition system. Journal of Non-Crystalline Solids, 59. 731-734 doi:10.1016/0022-3093(83)90275-2
Tsai, C.C., Nemanich, R.J. (1980) Structural studies of amorphous semiconducting thin films using interference enhanced raman scattering. Journal of Non-Crystalline Solids, 35. 1203-1208 doi:10.1016/0022-3093(80)90361-0
 
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