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Vdovin, V. I., Shcherbachev, K. D., Mironov, M., Parry, C. P., Parker, E. H. C. (2000) A study of structural perfection of interfaces in Si/SiGe superlattices. Crystallography Reports, 45 (4) 661-669 doi:10.1134/1.1306580

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Reference TypeJournal (article/letter/editorial)
TitleA study of structural perfection of interfaces in Si/SiGe superlattices
JournalCrystallography Reports
AuthorsVdovin, V. I.Author
Shcherbachev, K. D.Author
Mironov, M.Author
Parry, C. P.Author
Parker, E. H. C.Author
Year2000 (July)Volume45
Issue4
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1306580Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID609771Long-form Identifiermindat:1:5:609771:8
GUID0
Full ReferenceVdovin, V. I., Shcherbachev, K. D., Mironov, M., Parry, C. P., Parker, E. H. C. (2000) A study of structural perfection of interfaces in Si/SiGe superlattices. Crystallography Reports, 45 (4) 661-669 doi:10.1134/1.1306580
Plain TextVdovin, V. I., Shcherbachev, K. D., Mironov, M., Parry, C. P., Parker, E. H. C. (2000) A study of structural perfection of interfaces in Si/SiGe superlattices. Crystallography Reports, 45 (4) 661-669 doi:10.1134/1.1306580
In(2000, July) Crystallography Reports Vol. 45 (4) Pleiades Publishing Ltd

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