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Meuffels, P., Schroeder, H. (2011) Comment on “Exponential ionic drift: fast switching and low volatility of thin-film memristors” by D.B. Strukov and R.S. Williams in Appl. Phys. A (2009) 94: 515–519. Applied Physics A, 105. 65-67 doi:10.1007/s00339-011-6578-7

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Reference TypeJournal (article/letter/editorial)
TitleComment on “Exponential ionic drift: fast switching and low volatility of thin-film memristors” by D.B. Strukov and R.S. Williams in Appl. Phys. A (2009) 94: 515–519
JournalApplied Physics A
AuthorsMeuffels, P.Author
Schroeder, H.Author
Year2011 (October)Volume105
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s00339-011-6578-7Search in ResearchGate
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Mindat Ref. ID6015380Long-form Identifiermindat:1:5:6015380:5
GUID0
Full ReferenceMeuffels, P., Schroeder, H. (2011) Comment on “Exponential ionic drift: fast switching and low volatility of thin-film memristors” by D.B. Strukov and R.S. Williams in Appl. Phys. A (2009) 94: 515–519. Applied Physics A, 105. 65-67 doi:10.1007/s00339-011-6578-7
Plain TextMeuffels, P., Schroeder, H. (2011) Comment on “Exponential ionic drift: fast switching and low volatility of thin-film memristors” by D.B. Strukov and R.S. Williams in Appl. Phys. A (2009) 94: 515–519. Applied Physics A, 105. 65-67 doi:10.1007/s00339-011-6578-7
In(2011) Applied Physics A Vol. 105. Springer Science and Business Media LLC

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Strukov, Dmitri B., Williams, R. Stanley (2009) Exponential ionic drift: fast switching and low volatility of thin-film memristors. Applied Physics A, 94. 515-519 doi:10.1007/s00339-008-4975-3
Strukov, Dmitri B., Williams, R. Stanley (2011) Intrinsic constrains on thermally-assisted memristive switching. Applied Physics A, 102. 851-855 doi:10.1007/s00339-011-6269-4
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