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Tachikawa, Hiroto (1997) Electronic structures of linear polysilane radical cations in ground and low-lying excited states: a theoretical study. Chemical Physics Letters, 265. 455-459 doi:10.1016/s0009-2614(96)01478-9

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Reference TypeJournal (article/letter/editorial)
TitleElectronic structures of linear polysilane radical cations in ground and low-lying excited states: a theoretical study
JournalChemical Physics Letters
AuthorsTachikawa, HirotoAuthor
Year1997 (February)Volume265
PublisherElsevier BV
DOIdoi:10.1016/s0009-2614(96)01478-9Search in ResearchGate
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Mindat Ref. ID5895232Long-form Identifiermindat:1:5:5895232:8
GUID0
Full ReferenceTachikawa, Hiroto (1997) Electronic structures of linear polysilane radical cations in ground and low-lying excited states: a theoretical study. Chemical Physics Letters, 265. 455-459 doi:10.1016/s0009-2614(96)01478-9
Plain TextTachikawa, Hiroto (1997) Electronic structures of linear polysilane radical cations in ground and low-lying excited states: a theoretical study. Chemical Physics Letters, 265. 455-459 doi:10.1016/s0009-2614(96)01478-9
In(n.d.) Chemical Physics Letters Vol. 265. Elsevier BV

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Roszak, S., Balasubramanian, K. (1997) Theoretical study of the isomerization of TaC+n (n = 7−13) cations. Chemical Physics Letters, 265. 553-560 doi:10.1016/s0009-2614(96)01489-3
Yang, Xinzheng, Lin, Meirong, Zou, Wenli, Zhang, Baozheng (2003) Ab initio study on the ground and low-lying excited states of GaH. Chemical Physics Letters, 372. 355-361 doi:10.1016/s0009-2614(03)00434-2
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