Benyagoub, A. (2015) Quantitative analysis of the epitaxial recrystallization effect induced by swift heavy ions in silicon carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 365. 376-379 doi:10.1016/j.nimb.2015.07.027
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Quantitative analysis of the epitaxial recrystallization effect induced by swift heavy ions in silicon carbide | ||
| Journal | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
| Authors | Benyagoub, A. | Author | |
| Year | 2015 (December) | Volume | 365 |
| Publisher | Elsevier BV | ||
| DOI | doi:10.1016/j.nimb.2015.07.027Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5652234 | Long-form Identifier | mindat:1:5:5652234:5 |
| GUID | 0 | ||
| Full Reference | Benyagoub, A. (2015) Quantitative analysis of the epitaxial recrystallization effect induced by swift heavy ions in silicon carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 365. 376-379 doi:10.1016/j.nimb.2015.07.027 | ||
| Plain Text | Benyagoub, A. (2015) Quantitative analysis of the epitaxial recrystallization effect induced by swift heavy ions in silicon carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 365. 376-379 doi:10.1016/j.nimb.2015.07.027 | ||
| In | (2015) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 365. Elsevier BV | ||
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