Yan, J., Li, Y.-M., Yao, J.-H. (2003) Configuration interaction effect on dielectronic recombination rate of complex ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 205. 382-385 doi:10.1016/s0168-583x(02)01954-7
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Configuration interaction effect on dielectronic recombination rate of complex ions | ||
| Journal | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
| Authors | Yan, J. | Author | |
| Li, Y.-M. | Author | ||
| Yao, J.-H. | Author | ||
| Year | 2003 (May) | Volume | 205 |
| Publisher | Elsevier BV | ||
| DOI | doi:10.1016/s0168-583x(02)01954-7Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5625549 | Long-form Identifier | mindat:1:5:5625549:8 |
| GUID | 0 | ||
| Full Reference | Yan, J., Li, Y.-M., Yao, J.-H. (2003) Configuration interaction effect on dielectronic recombination rate of complex ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 205. 382-385 doi:10.1016/s0168-583x(02)01954-7 | ||
| Plain Text | Yan, J., Li, Y.-M., Yao, J.-H. (2003) Configuration interaction effect on dielectronic recombination rate of complex ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 205. 382-385 doi:10.1016/s0168-583x(02)01954-7 | ||
| In | (2003) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 205. Elsevier BV | ||
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