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Räisänen, J. (1985) The effect of encapsulation on the annealing behaviour of Mg- and Al-implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 334-336 doi:10.1016/0168-583x(85)90576-2

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Reference TypeJournal (article/letter/editorial)
TitleThe effect of encapsulation on the annealing behaviour of Mg- and Al-implanted silicon
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsRäisänen, J.Author
Year1985 (March)Volume7
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(85)90576-2Search in ResearchGate
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Mindat Ref. ID5584052Long-form Identifiermindat:1:5:5584052:7
GUID0
Full ReferenceRäisänen, J. (1985) The effect of encapsulation on the annealing behaviour of Mg- and Al-implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 334-336 doi:10.1016/0168-583x(85)90576-2
Plain TextRäisänen, J. (1985) The effect of encapsulation on the annealing behaviour of Mg- and Al-implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 334-336 doi:10.1016/0168-583x(85)90576-2
In(1985) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 7. Elsevier BV

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Jain, Amitabh (1985) The annealing of light ion implantation damage in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 326-328 doi:10.1016/0168-583x(85)90574-9
Antoncik, E. (1985) On the electrical (in)activity of group V impurities implanted in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 12 (2). 219-224 doi:10.1016/0168-583x(85)90054-0
Wilson, S.R. (1985) Transient annealing of ion implanted semiconductor materials. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 6 (1). 307-315 doi:10.1016/0168-583x(85)90650-0
Anttila, A., Räisänen, J., Lappalainen, R. (1985) On the optimization of an external PIXE arrangement. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 12 (2). 245-247 doi:10.1016/0168-583x(85)90058-8
(1985) Committees. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. doi:10.1016/0168-583x(85)90520-8
B ąkowski, Aleksander (1985) The influence of excess vacancy generation on the diffusion of ion implanted phosphorus into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 352-356 doi:10.1016/0168-583x(85)90580-4
(1985) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. doi:10.1016/0168-583x(85)90517-8
(1985) Conference photos. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. doi:10.1016/0168-583x(85)90519-1
(1985) Industrial sponsors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 10. doi:10.1016/0168-583x(85)90189-2
Rickards, J. (1985) The effect of oxides on PIXE measurements. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 12 (2). 269-272 doi:10.1016/0168-583x(85)90062-x
Toivanen, R.O., Hirvonen, J., Lindroos, V.K. (1985) Dezincification of boron implanted brass. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 200-204 doi:10.1016/0168-583x(85)90555-5
 
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