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Böhringer, K., Mannsperger, H., Kalbitzer, S. (1985) Electronic transport in a-Si:H produced by ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 299-303 doi:10.1016/0168-583x(85)90569-5

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Reference TypeJournal (article/letter/editorial)
TitleElectronic transport in a-Si:H produced by ion implantation
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsBöhringer, K.Author
Mannsperger, H.Author
Kalbitzer, S.Author
Year1985 (March)Volume7
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(85)90569-5Search in ResearchGate
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Mindat Ref. ID5584032Long-form Identifiermindat:1:5:5584032:3
GUID0
Full ReferenceBöhringer, K., Mannsperger, H., Kalbitzer, S. (1985) Electronic transport in a-Si:H produced by ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 299-303 doi:10.1016/0168-583x(85)90569-5
Plain TextBöhringer, K., Mannsperger, H., Kalbitzer, S. (1985) Electronic transport in a-Si:H produced by ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 299-303 doi:10.1016/0168-583x(85)90569-5
In(1985) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 7. Elsevier BV

See Also

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Matteson, S. (1985) Ion implantation in III–V materials. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 10. 510-514 doi:10.1016/0168-583x(85)90298-8
Ziegler, J.F. (1985) High energy ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 6 (1). 270-282 doi:10.1016/0168-583x(85)90645-7
Sigmon, T.W. (1985) Ion implantation in II–VI compound semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 402-408 doi:10.1016/0168-583x(85)90588-9
Nishi, Hidetoshi (1985) Ion implantation for high-speed III–V ICs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 395-401 doi:10.1016/0168-583x(85)90587-7
Tamura, M., Shukuri, S., Ichikawa, M., Wada, Y., Ishitani, T. (1985) Focused boron ion beam implantation into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 858-863 doi:10.1016/0168-583x(85)90483-5
(1985) Committees. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. doi:10.1016/0168-583x(85)90520-8
Pinizzotto, Russell F. (1985) Silicon on insulator by ion implantation: A dream or a reality?. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 261-264 doi:10.1016/0168-583x(85)90563-4
Jain, Amitabh (1985) The annealing of light ion implantation damage in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 326-328 doi:10.1016/0168-583x(85)90574-9
Matteson, S. (1985) Passivation of aluminum by ion mixing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 716-719 doi:10.1016/0168-583x(85)90458-6
(1985) Author index. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 929-940 doi:10.1016/0168-583x(85)90497-5
Wilbertz, Ch., Maisch, Th., Hüttner, D., Böhringer, K., Jousten, K., Kalbitzer, S. (1992) A focused gas-ion beam system for submun application. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 63 (1). 120-124 doi:10.1016/0168-583x(92)95180-y
 
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