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Rykov, A V, Denisov, S A, Shengurov, V G, Baidus, N V, Buzynin, Yu N (2020) GaAs diode structures with n+-p junction on Ge/Si templates. Journal of Physics: Conference Series, 1482. 12034pp. doi:10.1088/1742-6596/1482/1/012034

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Reference TypeJournal (article/letter/editorial)
TitleGaAs diode structures with n+-p junction on Ge/Si templates
JournalJournal of Physics: Conference Series
AuthorsRykov, A VAuthor
Denisov, S AAuthor
Shengurov, V GAuthor
Baidus, N VAuthor
Buzynin, Yu NAuthor
Year2020 (March)Volume1482
PublisherIOP Publishing
DOIdoi:10.1088/1742-6596/1482/1/012034Search in ResearchGate
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Mindat Ref. ID5340565Long-form Identifiermindat:1:5:5340565:8
GUID0
Full ReferenceRykov, A V, Denisov, S A, Shengurov, V G, Baidus, N V, Buzynin, Yu N (2020) GaAs diode structures with n+-p junction on Ge/Si templates. Journal of Physics: Conference Series, 1482. 12034pp. doi:10.1088/1742-6596/1482/1/012034
Plain TextRykov, A V, Denisov, S A, Shengurov, V G, Baidus, N V, Buzynin, Yu N (2020) GaAs diode structures with n+-p junction on Ge/Si templates. Journal of Physics: Conference Series, 1482. 12034pp. doi:10.1088/1742-6596/1482/1/012034
In(2020) Journal of Physics: Conference Series Vol. 1482. IOP Publishing

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