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Ranjbar Kermany, Atieh, Iacopi, Francesca (2015) Controlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers. Journal of Applied Physics, 118 (15). 155304pp. doi:10.1063/1.4934188

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Reference TypeJournal (article/letter/editorial)
TitleControlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers
JournalJournal of Applied Physics
AuthorsRanjbar Kermany, AtiehAuthor
Iacopi, FrancescaAuthor
Year2015 (October 21)Volume118
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.4934188Search in ResearchGate
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Mindat Ref. ID5202898Long-form Identifiermindat:1:5:5202898:4
GUID0
Full ReferenceRanjbar Kermany, Atieh, Iacopi, Francesca (2015) Controlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers. Journal of Applied Physics, 118 (15). 155304pp. doi:10.1063/1.4934188
Plain TextRanjbar Kermany, Atieh, Iacopi, Francesca (2015) Controlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers. Journal of Applied Physics, 118 (15). 155304pp. doi:10.1063/1.4934188
In(2015, October) Journal of Applied Physics Vol. 118 (15) AIP Publishing

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Pradeepkumar, Aiswarya, Mishra, Neeraj, Kermany, Atieh Ranjbar, Boeckl, John J., Hellerstedt, Jack, Fuhrer, Michael S., Iacopi, Francesca (2016) Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures. Applied Physics Letters, 109 (1). 11604pp. doi:10.1063/1.4955453
Pradeepkumar, Aiswarya, Mishra, Neeraj, Kermany, Atieh Ranjbar, Boeckl, John J., Hellerstedt, Jack, Fuhrer, Michael S., Iacopi, Francesca (2016) Response to “Comment on ‘Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures’” [Appl. Phys. Lett. 109, 196101 (2016)]. Applied Physics Letters, 109 (19). 196102pp. doi:10.1063/1.4967228
Kermany, Atieh R., Brawley, George, Mishra, Neeraj, Sheridan, Eoin, Bowen, Warwick P., Iacopi, Francesca (2014) Microresonators with Q-factors over a million from highly stressed epitaxial silicon carbide on silicon. Applied Physics Letters, 104 (8). 81901pp. doi:10.1063/1.4866268
Kermany, Atieh R., Bennett, James S., Valenzuela, Victor M., Bowen, Warwick P., Iacopi, Francesca (2017) Potential of epitaxial silicon carbide microbeam resonators for chemical sensing. physica status solidi (a), 214 (4). 1600437pp. doi:10.1002/pssa.201600437
Kermany, Atieh R., Bennett, James S., Valenzuela, Victor M., Bowen, Warwick P., Iacopi, Francesca (2017) Potential of epitaxial silicon carbide microbeam resonators for chemical sensing. physica status solidi (a), 214 (4). 1770122pp. doi:10.1002/pssa.201770122
Phan, Hoang-Phuong, Nguyen, Tuan-Khoa, Dinh, Toan, Ina, Ginnosuke, Kermany, Atieh Ranjbar, Qamar, Afzaal, Han, Jisheng, Namazu, Takahiro, Maeda, Ryutaro, Dao, Dzung Viet, Nguyen, Nam-Trung (2017) Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification. Applied Physics Letters, 110 (14). 141906pp. doi:10.1063/1.4979834
Kermany, Atieh R., Bennett, James S., Brawley, George A., Bowen, Warwick P., Iacopi, Francesca (2016) Factors affecting the f × Q product of 3C-SiC microstrings: What is the upper limit for sensitivity?. Journal of Applied Physics, 119 (5). 55304pp. doi:10.1063/1.4941274
Khan, Zulfiqar H, Kermany, Atieh R, Öchsner, Andreas, Iacopi, Francesca (2017) Mechanical and electromechanical properties of graphene and their potential application in MEMS. Journal of Physics D: Applied Physics, 50. 53003pp. doi:10.1088/1361-6463/50/5/053003
Mishra, N., Hold, L., Iacopi, A., Gupta, B., Motta, N., Iacopi, F. (2014) Controlling the surface roughness of epitaxial SiC on silicon. Journal of Applied Physics, 115 (20). 203501pp. doi:10.1063/1.4879237
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Mishra, Neeraj, Bosi, Matteo, Rossi, Francesca, Salviati, Giancarlo, Boeckl, John, Iacopi, Francesca (2019) Growth of graphitic carbon layers around silicon carbide nanowires. Journal of Applied Physics, 126 (6). 65304pp. doi:10.1063/1.5098987
 
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