Gunning, Brendan P., Clinton, Evan A., Merola, Joseph J., Doolittle, W. Alan, Bresnahan, Rich C. (2015) Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 118 (15). 155302pp. doi:10.1063/1.4933278

See Also

These are possibly similar items as determined by title/reference text matching only.

	Gunning, Brendan P., Fabien, Chloe A. M., Merola, Joseph J., Clinton, Evan A., Doolittle, W. Alan, Wang, Shuo, Fischer, Alec M., Ponce, Fernando A. (2015) Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN. Journal of Applied Physics, 117 (4). 45710pp. doi:10.1063/1.4906464
	Clinton, Evan A., Vadiee, Ehsan, Tellekamp, M. Brooks, Doolittle, W. Alan (2019) Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy. Journal of Applied Physics, 126 (1). 15705pp. doi:10.1063/1.5097557
	Namkoong, Gon, Doolittle, W. Alan, Brown, April S. (2000) Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 77 (26). 4386-4388 doi:10.1063/1.1334942
	Sadaf, Sharif Md., Tang, Haipeng (2020) Mapping the growth of p-type GaN layer under Ga-rich and N-rich conditions at low to high temperatures by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 117 (25) 254104pp. doi:10.1063/5.0029517
	Zhang, Meng, Bhattacharya, Pallab, Guo, Wei, Banerjee, Animesh (2010) Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions. Applied Physics Letters, 96 (13). 132103pp. doi:10.1063/1.3374882
	Ptak, A. J., Millecchia, M. R., Myers, T. H., Ziemer, K. S., Stinespring, C. D. (1999) The relation of active nitrogen species to high-temperature limitations for (0001̄) GaN growth by radio-frequency-plasma-assisted molecular beam epitaxy. Applied Physics Letters, 74 (25). 3836-3838 doi:10.1063/1.124196
	Yang, Z., Li, L. K., Wang, W. I. (1995) GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source. Applied Physics Letters, 67 (12). 1686-1688 doi:10.1063/1.115057
	Losurdo, Maria, Capezzuto, Pio, Bruno, Giovanni, Namkoong, Gon, Doolittle, W. Alan, Brown, April S. (2002) Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers. Journal of Applied Physics, 91 (4). 2508-2518 doi:10.1063/1.1435835
	Yang, W. C., Wu, C. H., Tseng, Y. T., Chiu, S. Y., Cheng, K. Y. (2015) Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures. Journal of Applied Physics, 117 (1). 15306pp. doi:10.1063/1.4905419
	Namkoong, Gon, Doolittle, W. Alan, Brown, April S., Losurdo, Maria, Capezzuto, Pio, Bruno, Giovanni (2002) Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics. Journal of Applied Physics, 91 (4). 2499-2507 doi:10.1063/1.1435834
	(2015) Extenuation of Stress and Defects in GaN Films Grown on a Metal–Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy. Crystal Growth & Design, 15 (5) 2144-2150 doi:10.1021/acs.cgd.5b00125