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Mohan, Nagaboopathy, Manikant, , Soman, Rohith, Raghavan, Srinivasan (2015) Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes. Journal of Applied Physics, 118 (13). 135302pp. doi:10.1063/1.4932148

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Reference TypeJournal (article/letter/editorial)
TitleIntegrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes
JournalJournal of Applied Physics
AuthorsMohan, NagaboopathyAuthor
Manikant, Author
Soman, RohithAuthor
Raghavan, SrinivasanAuthor
Year2015 (October 7)Volume118
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.4932148Search in ResearchGate
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Mindat Ref. ID5202801Long-form Identifiermindat:1:5:5202801:8
GUID0
Full ReferenceMohan, Nagaboopathy, Manikant, , Soman, Rohith, Raghavan, Srinivasan (2015) Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes. Journal of Applied Physics, 118 (13). 135302pp. doi:10.1063/1.4932148
Plain TextMohan, Nagaboopathy, Manikant, , Soman, Rohith, Raghavan, Srinivasan (2015) Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes. Journal of Applied Physics, 118 (13). 135302pp. doi:10.1063/1.4932148
In(2015, October) Journal of Applied Physics Vol. 118 (13) AIP Publishing

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Soman, Rohith, Mohan, Nagaboopathy, Chandrasekar, Hareesh, Bhat, Navakanta, Raghavan, Srinivasan (2018) Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates. Journal of Applied Physics, 124 (24). 245104pp. doi:10.1063/1.5063420
Rathkanthiwar, Shashwat, Kalra, Anisha, Remesh, Nayana, Bardhan, Abheek, Muralidharan, Rangarajan, Nath, Digbijoy N., Raghavan, Srinivasan (2020) Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111) Journal of Applied Physics, 127 (21) 215705pp. doi:10.1063/1.5140507
Bardhan, Abheek, Mohan, Nagaboopathy, Chandrasekar, Hareesh, Ghosh, Priyadarshini, Sridhara Rao, D. V., Raghavan, Srinivasan (2018) The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth. Journal of Applied Physics, 123 (16). 165108pp. doi:10.1063/1.5005080
Noshin, Maliha, Wen, Xinyi, Soman, Rohith, Xu, Xiaoqing, Chowdhury, Srabanti (2023) Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors. Applied Physics Letters, 123 (6) doi:10.1063/5.0140777
Nagaboopathy, Mohan, Ravishankar, Narayanan, Raghavan, Srinivasan (2013) Synergistic effect of reactor chemistry and compressive stress on dislocation bending during GaN growth. Applied Physics Letters, 103 (4). 41912pp. doi:10.1063/1.4816742
Chandrasekar, Hareesh, Mohan, Nagaboopathy, Bardhan, Abheek, Bhat, K. N., Bhat, Navakanta, Ravishankar, N., Raghavan, Srinivasan (2013) An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si. Applied Physics Letters, 103 (21). 211902pp. doi:10.1063/1.4831968
Tran, Dat Q.; Soman, Rohith; Kim, Jeong-Kyu; Malakoutian, Mohamadali; Chowdhury, Srabanti (2026) Cooling performance of top-side polycrystalline diamond integration in RF-power N-polar GaN high-electron-mobility transistors predicted using a robust modeling platform. Journal of Applied Physics, 139 (11). doi:10.1063/5.0304824
Zhang, Yifei, Singh, Jasprit (1999) Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor. Journal of Applied Physics, 85 (1). 587-594 doi:10.1063/1.369493
Jana, Dipankar, Porwal, S., Jain, Anubha, Oak, S. M., Sharma, T. K. (2015) Origin of fine oscillations in the photoluminescence spectrum of 2-dimensional electron gas formed in AlGaN/GaN high electron mobility transistor structures. Journal of Applied Physics, 118 (16). 164502pp. doi:10.1063/1.4934525
Liu, Chao, Cai, Yuefei, Liu, Zhaojun, Ma, Jun, Lau, Kei May (2015) Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 106 (18). 181110pp. doi:10.1063/1.4921049
Jos, Rik (2013) A semi-analytical, two-dimensional model for AlGaN/GaN high-electron-mobility-transistor Schottky currents at high reverse voltages. Journal of Applied Physics, 114 (7). 74512pp. doi:10.1063/1.4818832
 
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