Xue, Shoubin, Huang, Ru, Wang, Pengfei, Wang, Wenhua, Wu, Dake, Pei, Yunpeng, Zhang, Xing (2009) Impact of proton-radiation-induced spacer damage on the dc characteristics degradation in deep-submicron metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 105 (8). 84505pp. doi:10.1063/1.3106163

See Also

These are possibly similar items as determined by title/reference text matching only.

	Wang, Sihao, Pei, Yunpeng, Huang, Ru, Wang, Wenhua, Liu, Wen, Xue, Shoubin, An, Xia, Tian, Jingquan, Wang, Yangyuan (2010) A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation. Journal of Applied Physics, 107 (2). 24515pp. doi:10.1063/1.3277017
	Xue, Shou-Bin, Huang, Ru, Huang, De-Tao, Wang, Si-Hao, Tan, Fei, Wang, Jian, An, Xia, Zhang, Xing (2010) Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation. Chinese Physics B, 19. 117307pp. doi:10.1088/1674-1056/19/11/117307
	Srinivasan, R., Bhat, Navakanta (2006) Effect of gate-drain/source overlap on the noise in 90nm N-channel metal oxide semiconductor field effect transistors. Journal of Applied Physics, 99 (8). 84505pp. doi:10.1063/1.2189217
	Ren, Hongxia, Hao, Yue, Xue, Lei (2001) Characteristics of Deep Submicron Grooved-Gate P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 40. 5893-5899 doi:10.1143/jjap.40.5893
	Ren, Pengpeng, Wang, Runsheng, Jiang, Xiaobo, Qiu, Yingxin, Liu, Changze, Huang, Ru (2014) Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics. Applied Physics Letters, 104 (26). 263512pp. doi:10.1063/1.4885394
	Kolev, Plamen V., Deen, M. J. (1998) Constant-resistance deep-level transient spectroscopy in submicron metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 83 (2). 820-825 doi:10.1063/1.366763
	Choi, J. Y., Ko, P. K., Hu, C. (1987) Effect of oxide field on hot‐carrier‐induced degradation of metal‐oxide‐semiconductor field‐effect transistors. Applied Physics Letters, 50 (17). 1188-1190 doi:10.1063/1.97906
	Gu, J. J., Wu, Y. Q., Ye, P. D. (2011) Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 109 (5). 53709pp. doi:10.1063/1.3553440
	Lukyanchikova, N. B., Petrichuk, M. V., Garbar, N., Mercha, A., Simoen, E., Claeys, C. (2003) Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal–oxide–semiconductor field-effect transistors. Journal of Applied Physics, 94 (7). 4461-4469 doi:10.1063/1.1604452
	Chow, P. D., Wang, K. L. (1985) Study of high electrical field induced degradation of channel response in metal‐oxide‐semiconductor field‐effect transistors using an ac conductance technique. Applied Physics Letters, 47 (11). 1177-1179 doi:10.1063/1.96318
	Huang, Po-Chin, Kang, Ting-Kuo, Wang, Bo-Chin, Wu, San-Lein, Chang, Shoou-Jinn (2009) Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 48 (4) 4 doi:10.1143/jjap.48.04c038