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Glinka, Yuri D., Foreman, John V., Everitt, Henry O., Lee, Don S., Steckl, Andrew J. (2009) Direct and indirect photoluminescence excitation and ultraviolet emission from Tm-doped AlxGa1−xN. Journal of Applied Physics, 105 (8). 83509pp. doi:10.1063/1.3098256

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Reference TypeJournal (article/letter/editorial)
TitleDirect and indirect photoluminescence excitation and ultraviolet emission from Tm-doped AlxGa1−xN
JournalJournal of Applied Physics
AuthorsGlinka, Yuri D.Author
Foreman, John V.Author
Everitt, Henry O.Author
Lee, Don S.Author
Steckl, Andrew J.Author
Year2009 (April 15)Volume105
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.3098256Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5166138Long-form Identifiermindat:1:5:5166138:4
GUID0
Full ReferenceGlinka, Yuri D., Foreman, John V., Everitt, Henry O., Lee, Don S., Steckl, Andrew J. (2009) Direct and indirect photoluminescence excitation and ultraviolet emission from Tm-doped AlxGa1−xN. Journal of Applied Physics, 105 (8). 83509pp. doi:10.1063/1.3098256
Plain TextGlinka, Yuri D., Foreman, John V., Everitt, Henry O., Lee, Don S., Steckl, Andrew J. (2009) Direct and indirect photoluminescence excitation and ultraviolet emission from Tm-doped AlxGa1−xN. Journal of Applied Physics, 105 (8). 83509pp. doi:10.1063/1.3098256
In(2009, April) Journal of Applied Physics Vol. 105 (8) AIP Publishing

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Lee, D. S., Steckl, A. J. (2003) Enhanced blue emission from Tm-doped AlxGa1−xN electroluminescent thin films. Applied Physics Letters, 83 (11). 2094-2096 doi:10.1063/1.1611275
Hömmerich, U., Nyein, Ei Ei, Lee, D. S., Steckl, A. J., Zavada, J. M. (2003) Photoluminescence properties of in situ Tm-doped AlxGa1−xN. Applied Physics Letters, 83 (22). 4556-4558 doi:10.1063/1.1631742
Glinka, Y. D., Everitt, H. O., Lee, D. S., Steckl, A. J. (2009) Effect ofTm3+-induced defects on the photoexcitation energy relaxation in Tm-dopedAlxGa1−xN. Physical Review B, 79 (11) doi:10.1103/physrevb.79.113202
Simmons, Jay G., Foreman, John V., Liu, Jie, Everitt, Henry O. (2013) The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities. Applied Physics Letters, 103 (20). 201110pp. doi:10.1063/1.4829745
Nepal, N., Zavada, J. M., Lee, D. S., Steckl, A. J., Sedhain, A., Lin, J. Y., Jiang, H. X. (2009) Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys. Applied Physics Letters, 94 (11). 111103pp. doi:10.1063/1.3097808
Peng, Hongying, Lee, Chang-Won, Everitt, Henry O., Munasinghe, Chanaka, Lee, D. S., Steckl, Andrew J. (2007) Spectroscopic and energy transfer studies of Eu3+ centers in GaN. Journal of Applied Physics, 102 (7). 73520pp. doi:10.1063/1.2783893
Nyein, E., Hömmerich, U., Lee, D. S., Steckl, A. J., Zavada, J. M. (2005) Spectroscopic studies of the infrared emission from Tm doped AlxGa1-xN thin films. physica status solidi (c), 2 (7). 2796-2799 doi:10.1002/pssc.200461467
Lee, Chang-Won, Everitt, Henry O., Lee, D. S., Steckl, A. J., Zavada, J. M. (2004) Temperature dependence of energy transfer mechanisms in Eu-doped GaN. Journal of Applied Physics, 95 (12). 7717-7724 doi:10.1063/1.1738529
Nepal, N., Zavada, J. M., Lee, D. S., Steckl, A. J. (2008) Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation. Applied Physics Letters, 93 (6). 61110pp. doi:10.1063/1.2970993
Porter, H. L., Muth, J. F., Narayan, J., Foreman, John V., Everitt, Henry O. (2006) Photoluminescence study of ZnO films codoped with nitrogen and tellurium. Journal of Applied Physics, 100 (12). 123102pp. doi:10.1063/1.2372312
Steckl, A. J., Garter, M., Lee, D. S., Heikenfeld, J., Birkhahn, R. (1999) Blue emission from Tm-doped GaN electroluminescent devices. Applied Physics Letters, 75 (15). 2184-2186 doi:10.1063/1.124958
 
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