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Jin, Seonghoon, Fischetti, Massimo V., Tang, Ting-wei (2007) Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity. Journal of Applied Physics, 102 (8). 83715pp. doi:10.1063/1.2802586

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Reference TypeJournal (article/letter/editorial)
TitleModeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity
JournalJournal of Applied Physics
AuthorsJin, SeonghoonAuthor
Fischetti, Massimo V.Author
Tang, Ting-weiAuthor
Year2007 (October 15)Volume102
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.2802586Search in ResearchGate
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Mindat Ref. ID5152304Long-form Identifiermindat:1:5:5152304:8
GUID0
Full ReferenceJin, Seonghoon, Fischetti, Massimo V., Tang, Ting-wei (2007) Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity. Journal of Applied Physics, 102 (8). 83715pp. doi:10.1063/1.2802586
Plain TextJin, Seonghoon, Fischetti, Massimo V., Tang, Ting-wei (2007) Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity. Journal of Applied Physics, 102 (8). 83715pp. doi:10.1063/1.2802586
In(2007, October) Journal of Applied Physics Vol. 102 (8) AIP Publishing

See Also

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Jin, Seonghoon, Fischetti, Massimo V., Tang, Ting-wei (2008) Differential conductance fluctuations in silicon nanowire transistors caused by quasiballistic transport and scattering induced intersubband transitions. Applied Physics Letters, 92 (8). 82103pp. doi:10.1063/1.2888963
Fischetti, Massimo V., Narayanan, Sudarshan (2011) An empirical pseudopotential approach to surface and line-edge roughness scattering in nanostructures: Application to Si thin films and nanowires and to graphene nanoribbons. Journal of Applied Physics, 110 (8). 83713pp. doi:10.1063/1.3650249
Vandenberghe, William G., Fischetti, Massimo V. (2014) Calculation of room temperature conductivity and mobility in tin-based topological insulator nanoribbons. Journal of Applied Physics, 116 (17). 173707pp. doi:10.1063/1.4901063
Ong, Zhun-Yong, Fischetti, Massimo V. (2013) Top oxide thickness dependence of remote phonon and charged impurity scattering in top-gated graphene. Applied Physics Letters, 102 (18). 183506pp. doi:10.1063/1.4804432
Fischetti, Massimo V. (2014) Depression of the normal-superfluid transition temperature in gated bilayer graphene. Journal of Applied Physics, 115 (16). 163711pp. doi:10.1063/1.4873637
Kim, Jiseok, Fischetti, Massimo V. (2011) Empirical pseudopotential calculations of the band structure and ballistic conductance of strained [001], [110], and [111] silicon nanowires. Journal of Applied Physics, 110 (3). 33716pp. doi:10.1063/1.3615942
Fischetti, Massimo V. (1985) Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection. Journal of Applied Physics, 57 (8). 2860-2879 doi:10.1063/1.335223
Kotlyar, R., Obradovic, B., Matagne, P., Stettler, M., Giles, M. D. (2004) Assessment of room-temperature phonon-limited mobility in gated silicon nanowires. Applied Physics Letters, 84 (25). 5270-5272 doi:10.1063/1.1762695
Vandenberghe, William G., Fischetti, Massimo V. (2015) Deformation potentials for band-to-band tunneling in silicon and germanium from first principles. Applied Physics Letters, 106 (1). 13505pp. doi:10.1063/1.4905591
Ong, Zhun-Yong, Fischetti, Massimo V. (2013) Mobility enhancement and temperature dependence in top-gated single-layer MoS2. Physical Review B, 88 (16) doi:10.1103/physrevb.88.165316
O'Regan, Terrance, Fischetti, Massimo (2007) Remote Phonon Scattering in Si and Ge with SiO2and HfO2Insulators: Does the Electron Mobility Determine Short Channel Performance?. Japanese Journal of Applied Physics, 46 (5) 3265-3272 doi:10.1143/jjap.46.3265
 
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