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Acharya, K. P., Ullrich, B., Erlacher, A. (2007) Responsivity of ZnTe∕n-GaAs heterostructures formed by infrared nanosecond laser deposition. Journal of Applied Physics, 102 (7). 73107pp. doi:10.1063/1.2786890

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Reference TypeJournal (article/letter/editorial)
TitleResponsivity of ZnTe∕n-GaAs heterostructures formed by infrared nanosecond laser deposition
JournalJournal of Applied Physics
AuthorsAcharya, K. P.Author
Ullrich, B.Author
Erlacher, A.Author
Year2007 (October)Volume102
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.2786890Search in ResearchGate
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Mindat Ref. ID5151883Long-form Identifiermindat:1:5:5151883:3
GUID0
Full ReferenceAcharya, K. P., Ullrich, B., Erlacher, A. (2007) Responsivity of ZnTe∕n-GaAs heterostructures formed by infrared nanosecond laser deposition. Journal of Applied Physics, 102 (7). 73107pp. doi:10.1063/1.2786890
Plain TextAcharya, K. P., Ullrich, B., Erlacher, A. (2007) Responsivity of ZnTe∕n-GaAs heterostructures formed by infrared nanosecond laser deposition. Journal of Applied Physics, 102 (7). 73107pp. doi:10.1063/1.2786890
In(2007, October) Journal of Applied Physics Vol. 102 (7) AIP Publishing

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Acharya, K. P., Khatri, H., Ullrich, B. (2009) Physical characterization of n-GaAs on p-Si formed by low-temperature pulsed-laser deposition. Journal of Applied Physics, 105 (10). 103111pp. doi:10.1063/1.3132819
Ullrich, B., Erlacher, A. (2005) Rectification and intrinsic photocurrent of GaAs∕Si photodiodes formed with pulsed-laser deposition at 1064nm. Applied Physics Letters, 87 (15). 151115pp. doi:10.1063/1.2093942
Ullrich, B, Erlacher, A (2005) Photosensitive hetero-pairing of p-GaAs/n-Si by pulsed-laser deposition. Journal of Physics D: Applied Physics, 38. 4048-4052 doi:10.1088/0022-3727/38/22/007
Erlacher, A., Ambrico, M., Perna, G., Schiavulli, L., Ligonzo, T., Jaeger, H., Ullrich, B. (2005) Absorption and photoconductivity properties of ZnTe thin films formed by pulsed-laser deposition on glass. Applied Surface Science, 248. 402-405 doi:10.1016/j.apsusc.2005.03.041
Ullrich, B., Brown, G. J. (2011) Doping of GaAs by laser ablated ZnTe. Applied Physics Letters, 99 (9). 91103pp. doi:10.1063/1.3630033
Acharya, K P, Skuza, J R, Lukaszew, R A, Liyanage, C, Ullrich, B (2007) CdS thin films formed on flexible plastic substrates by pulsed-laser deposition. Journal of Physics: Condensed Matter, 19 (19). 196221pp. doi:10.1088/0953-8984/19/19/196221
Erlacher, A., Ullrich, B., Komarova, E.Y., Jaeger, H., Haugan, H.J., Brown, G.J. (2006) Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition. Journal of Non-Crystalline Solids, 352 (2) 193-196 doi:10.1016/j.jnoncrysol.2005.10.025
Erlacher, Artur, Lukaszew, Alejandra R., Jaeger, Herbert, Ullrich, Bruno (2006) Structural and surface analysis of thin-film ZnTe formed with pulsed-laser deposition. Surface Science, 600 (18). 3762-3765 doi:10.1016/j.susc.2006.02.061
Ullrich, B, Erlacher, A, Smith, H E, Mitchel, W C, Brown, G J (2008) Electronic properties of p-GaAs deposited on n-Si with pulsed-laser deposition. Journal of Physics: Condensed Matter, 20 (17). 175217pp. doi:10.1088/0953-8984/20/17/175217
Khanlary, M., Townsend, P., Ullrich, B., Hole, D. E. (2005) Ion-beam luminescence of thin-film CdS on glass formed by pulsed-laser deposition. Journal of Applied Physics, 97 (2). 23512pp. doi:10.1063/1.1830085
Ji, W., Kukaswadia, A. K., Feng, Z. C., Tang, S. H. (1994) Self‐defocusing of nanosecond laser pulses in ZnTe. Journal of Applied Physics, 75 (7). 3340-3343 doi:10.1063/1.356118
 
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