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Sathaiya, D. Mahaveer, Karmalkar, Shreepad (2007) A model for the high field leakage current in nitrided oxides. Journal of Applied Physics, 101 (10). 106104pp. doi:10.1063/1.2736650

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Reference TypeJournal (article/letter/editorial)
TitleA model for the high field leakage current in nitrided oxides
JournalJournal of Applied Physics
AuthorsSathaiya, D. MahaveerAuthor
Karmalkar, ShreepadAuthor
Year2007 (May 15)Volume101
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2736650Search in ResearchGate
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Mindat Ref. ID5145508Long-form Identifiermindat:1:5:5145508:4
GUID0
Full ReferenceSathaiya, D. Mahaveer, Karmalkar, Shreepad (2007) A model for the high field leakage current in nitrided oxides. Journal of Applied Physics, 101 (10). 106104pp. doi:10.1063/1.2736650
Plain TextSathaiya, D. Mahaveer, Karmalkar, Shreepad (2007) A model for the high field leakage current in nitrided oxides. Journal of Applied Physics, 101 (10). 106104pp. doi:10.1063/1.2736650
In(2007, May) Journal of Applied Physics Vol. 101 (10) AIP Publishing

See Also

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Mahaveer Sathaiya, D., Karmalkar, Shreepad (2006) Thermionic trap-assisted tunneling model and its application to leakage current in nitrided oxides and AlGaN∕GaN high electron mobility transistors. Journal of Applied Physics, 99 (9). 93701pp. doi:10.1063/1.2191620
Karmalkar, Shreepad, Sathaiya, D. Mahaveer, Shur, M. S. (2003) Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 82 (22). 3976-3978 doi:10.1063/1.1579852
Karmalkar, Shreepad, Sathaiya, D. Mahaveer (2003) Unified closed-form model of thermionic-field and field emissions through a triangular potential barrier. Applied Physics Letters, 82 (9). 1431-1433 doi:10.1063/1.1557773
Sudharsanan, S., Karmalkar, Shreepad (2010) Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors. Journal of Applied Physics, 107 (6). 64501pp. doi:10.1063/1.3340826
Karmalkar, Shreepad, Maheswaran, K. R. K., Gurugubelli, Vijayakumar (2011) Ambient field effects on the current-voltage characteristics of nanowire field effect transistors. Applied Physics Letters, 98 (6). 63508pp. doi:10.1063/1.3555426
Kumar Gurugubelli, Vijaya, Karmalkar, Shreepad (2014) A unified analytical model of the junction electrostatics in nanowire and nanotube arrays. Applied Physics Letters, 104 (20). 203502pp. doi:10.1063/1.4879261
Gurugubelli, Vijaya Kumar, Karmalkar, Shreepad (2017) Effective medium theory based analytical models for the potential and field distributions in arrays of nanoscale junctions. Journal of Applied Physics, 122 (2). 24502pp. doi:10.1063/1.4991485
Ajoy, Arvind, Laux, S. E., Murali, Kota V. R. M., Karmalkar, Shreepad (2013) Multiscale model for phonon-assisted band-to-band tunneling in semiconductors. Journal of Applied Physics, 113 (6). 64506pp. doi:10.1063/1.4790628
Shukkoor, Anvar A., Karmalkar, Shreepad (2018) Space-charge and current non-uniformities, and contact resistivity of end-bonded metal contacts to thin heavily doped semiconductor nanowires. Journal of Applied Physics, 124 (8). 84502pp. doi:10.1063/1.5041330
Gurugubelli, Vijaya Kumar, Karmalkar, Shreepad (2015) Analytical theory of the space-charge region of lateral p-n junctions in nanofilms. Journal of Applied Physics, 118 (3). 34503pp. doi:10.1063/1.4926478
Do, V. Nam, Dollfus, P. (2007) Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 101 (7). 73709pp. doi:10.1063/1.2716874
 
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